Non-volatile semiconductor memory device

  • US 6,172,397 B1
  • Filed: 12/30/1998
  • Issued: 01/09/2001
  • Est. Priority Date: 06/15/1995
  • Status: Expired due to Term
First Claim
Patent Images

1. A non-volatile semiconductor memory device comprising:

  • a p type source region and a p type drain region formed in a surface of an n type region of a semiconductor substrate, with a channel region therebetween;

    a layer stack overlying the channel region and comprising, in overlying sequence from the channel region;

    a first insulating layer comprising a tunnel oxide film;

    a floating gate charge storage electrode layer;

    a second insulating layer; and

    a control gate electrode layer, wherein each of the layers comprising the layer stack is coextensive with the other layers of the layer stack; and

    data program means for programming the memory device with data, the data program means including means for injecting electrons from within the drain region to the floating gate charge storage electrode by hot electron injection induced by a band-to-band tunnel current.

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