Silicon oxide dielectric material with excess silicon as diffusion barrier layer

  • US 6,174,797 B1
  • Filed: 11/08/1999
  • Issued: 01/16/2001
  • Est. Priority Date: 11/08/1999
  • Status: Expired due to Term
First Claim
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1. A method for forming upon a substrate employed within a microelectronics fabrication an inter-level metal dielectric (IMD) layer comprising:

  • providing a substrate;

    forming upon the substrate a patterned microelectronics layer;

    forming over the substrate a dielectric layer;

    forming over the dielectric layer a silicon rich silicon oxide diffusion barrier dielectric layer; and

    forming over the substrate a patterned conductor layer.

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