Silicon oxide dielectric material with excess silicon as diffusion barrier layer

• US 6,174,797 B1
• Filed: 11/08/1999
• Issued: 01/16/2001
• Est. Priority Date: 11/08/1999
• Status: Expired due to Term

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Bao, Tien-I, Jang, Syun-Ming
• Primary Examiner(s): Nelms, David
• Assistant Examiner(s): Dang, Phuc T.
• Application Number:
  US09/435,678
• Time in Patent Office: 435 Days
• Field of Search: 438/624, 438/706, 438/656, 438/789, 438/627, 438/643, 438/653, 205/666, 205/667, 216/2, 216/67, 216/74, 216/76, 216/79
• US Class Current: 438/624
• CPC Class Codes: H01L 21/02131 the material being halogen doped silicon oxides, e.g. FSG
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/02362 formation of intermediate layers, e.g. capping layers or diffusion barriers
• CPC Class Codes: H01L 21/31604 Deposition from a gas or vapour H01L21/31691, H01L21/31695 take precedence
• CPC Class Codes: H01L 21/31629 Deposition of halogen doped silicon oxide, e.g. fluorine doped silicon oxide
• CPC Class Codes: H01L 21/76801 characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
• CPC Class Codes: H01L 21/76829 characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
• CPC Class Codes: H01L 21/76834 formation of thin insulating films on the sidewalls or on top of conductors H01L21/76831 takes precedence

Abstract

A method for forming upon a substrate employed within a microelectronics fabrication a first dielectric layer, an intermediate diffusion barrier dielectric layer and a conductor layer which comprise an inter-level metal dielectric (IMD) layer with attenuated diffusion between the dielectric layers and conductor layer. There is first provided a substrate employed within a microelectronics fabrication. There is then formed upon the substrate a patterned microelectronics layer. There is then formed over the substrate a first dielectric layer. There is then formed over the substrate a diffusion barrier dielectric layer. There is then formed over the substrate a conductor layer to complete an inter-level metal dielectric (IMD) layer with attenuated inter-diffusion between the dielectric layers and conductor layer.

Claims

1. A method for forming upon a substrate employed within a microelectronics fabrication an inter-level metal dielectric (IMD) layer comprising:

providing a substrate;

forming upon the substrate a patterned microelectronics layer;

forming over the substrate a dielectric layer;

forming over the dielectric layer a silicon rich silicon oxide diffusion barrier dielectric layer; and

forming over the substrate a patterned conductor layer.

2. The method of claim 1 wherein there is attenuated inter-diffusion between the dielectric layer and the conductor layer.

3. The method of claim 1 wherein the substrate is employed within a microelectronics fabrication selected from the group consisting of:

integrated circuit microelectronics fabrications;

charge coupled device microelectronics fabrications;

solar cell microelectronics fabrications;

optoelectronics microelectronics fabrications;

ceramic substrate microelectronics fabrications; and

flat panel display microelectronics fabrications.

4. The method of claim 1 wherein the patterned microelectronics layer is selected from the group consisting of:

microelectronics conductor layers;

microelectronics semiconductor layers; and

microelectronics dielectric layers.

5. The method of claim 1 wherein the dielectric layer is formed employing a fluorine-doped silicon containing and/or carbon-containing dielectric material.

6. The method of claim 1 wherein the diffusion barrier dielectric layer is formed employing plasma enhanced chemical vapor deposition (PECVD) of a silicon-rich silicon oxide dielectric material.

7. The method of claim 6 wherein the silicon rich silicon oxide dielectric diffusion barrier layer material has a refractive index of from about 1.47 to about 1.8.

8. The method of claim 1 wherein the patterned conductor layer is formed from copper or copper alloy conductor material.

9. A method for forming upon a semiconductor substrate employed within an integrated circuit microelectronics fabrication an inter-level metal dielectric (IMD) layer comprising:

providing a semiconductor substrate having formed therein a patterned microelectronics layer and a first dielectric layer employing fluorine-doped low dielectric constant dielectric material;

forming over the semiconductor substrate a silicon rich silicon oxide dielectric diffusion barrier layer;

forming over the substrate a second dielectric layer;

forming over the substrate a patterned photoresist etch mask layer and etching the pattern thereof into the second dielectric layer and diffusion barrier dielectric layer followed by stripping the photoresist etch mask layer;

filling the etched pattern with a copper conductor material; and

planarizing the surface of the second dielectric layer and copper layer.

10. The method of claim 9 wherein there is attenuated diffusion of fluorine species from the first low dielectric constant FSG layer into the silicon rich silicon oxide diffusion barrier dielectric layer.

11. The method of claim 9 wherein the semiconductor substrate is a silicon semiconductor substrate.

12. The method of claim 9 wherein the patterned microelectronics layer is formed from materials selected from the group consisting of:

microelectronics conductor materials;

microelectronics semiconductor materials; and

microelectronics dielectric materials.

13. The method of claim 9 wherein the first fluorine-containing low dielectric constant dielectric layer is formed from material selected from the group consisting of:

fluorine-doped silicon containing glass (FSG) dielectric material;

fluorine-containing carbon containing dielectric material; and

fluorine-containing carbon and/or silicon containing dielectric material.

14. The method of claim 9 wherein the silicon-rich silicon oxide dielectric layer is formed employing plasma enhanced chemical vapor deposition (PECVD).

15. The method of claim 14 wherein the silicon rich silicon oxide dielectric material has a refractive index of from about 1.47 to about 1.8.

16. The method of claim 9 wherein the second dielectric layer is formed employing dielectric material selected from the group consisting of:

silicon containing dielectric material;

fluorine-containing silicon containing glass dielectric material;

fluorine-containing carbon containing dielectric material; and

fluorine-containing carbon and silicon containing dielectric material.

17. The method of claim 9 wherein the copper containing conductor material is formed employing electrodeposition (ED) method.

18. The method of claim 9 wherein the planarization process is a chemical mechanical polish (CMP) planarization process.