Method of manufacturing a thin film transistor using multiple sputtering chambers

  • US 6,177,302 B1
  • Filed: 09/22/1994
  • Issued: 01/23/2001
  • Est. Priority Date: 11/09/1990
  • Status: Expired due to Fees
First Claim
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1. A method of manufacturing an insulated gate field effect transistor comprising:

  • forming a gate electrode on an insulating surface of a substrate;

    forming a gate insulating film comprising silicon oxide over said gate electrode;

    forming a semiconductor film comprising amorphous silicon on said gate insulating film successively after the formation of said gate insulating film without exposing said gate insulating film to air, said semiconductor film comprising hydrogen and having a portion to become a channel region of said transistor, crystallizing said semiconductor film including said portion after the formation of said semiconductor film; and

    forming source and drain regions with said channel region extending therebetween;

    wherein said semiconductor film after the crystallization exhibits a Raman shift to a small wave number direction from 520 cm


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