Method of manufacturing a thin film transistor using multiple sputtering chambers

• US 6,177,302 B1
• Filed: 09/22/1994
• Issued: 01/23/2001
• Est. Priority Date: 11/09/1990
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Zhang, Hongyong, Fukada, Takeshi, Inushima, Takashi
• Primary Examiner(s): BOOTH, RICHARD A
• Application Number:
  US08/310,364
• Time in Patent Office: 2,315 Days
• Field of Search: 204/298.25, 204/192.22, 204/192.23, 437/21, 437/41, 437/101, 437/909, 438/158, 438/485, 438/486, 438/487, 438/166, 438/907, 438/908
• US Class Current: 438/158
• CPC Class Codes: C23C 14/568 Transferring the substrates through a series of coating stations C23C14/562 takes precedence
• CPC Class Codes: H01L 21/02422 Non-crystalline insulating materials, e.g. glass, polymers
• CPC Class Codes: H01L 21/02488 Insulating materials
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 21/02661 In-situ cleaning
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: Y10S 438/906 Cleaning of wafer as interim step
• CPC Class Codes: Y10S 438/907 Continuous processing
• CPC Class Codes: Y10S 438/908 Utilizing cluster apparatus

Abstract

A method of manufacturing thin film field effect transistors is described. The channel region of the transistors is formed by depositing an amorphous semiconductor film in a first sputtering apparatus followed by thermal treatment for converting the amorphous phase to a polycrystalline phase. The gate insulating film is formed by depositing an oxide film in a second sputtering apparatus connected to the first apparatus through a gate valve. The sputtering for the deposition of the amorphous semiconductor film is carried out in an atmosphere comprising hydrogen in order to introduce hydrogen into the amorphous semiconductor film. On the other hand the gate insulating oxide film is deposited by sputtering in an atmosphere comprising oxygen.

Claims

1. A method of manufacturing an insulated gate field effect transistor comprising:

forming a gate electrode on an insulating surface of a substrate;

forming a gate insulating film comprising silicon oxide over said gate electrode;

forming a semiconductor film comprising amorphous silicon on said gate insulating film successively after the formation of said gate insulating film without exposing said gate insulating film to air, said semiconductor film comprising hydrogen and having a portion to become a channel region of said transistor,

crystallizing said semiconductor film including said portion after the formation of said semiconductor film; and

forming source and drain regions with said channel region extending therebetween;

wherein said semiconductor film after the crystallization exhibits a Raman shift to a small wave number direction from 520 cm<sup>−

1</sup>.

2. A method according to claim 1 wherein a concentration of oxygen in said semiconductor film is not higher than 1×

10¹⁹ atoms/cm³.

14. The method of manufacturing an insulating gate field effect transistor of claim 1 wherein said semiconductor film contains hydrogen at a concentration not higher than 5 atom %.

15. The method of manufacturing an insulating gate field effect transistor of claim 1 wherein said semiconductor film has an electron mobility 50 to 300 cm²/Vs.

16. The method of manufacturing an insulating gate field effect transistor of claim 1 wherein said semiconductor film after the crystallization has an average diameter of crystals in the crystallized semiconductor film within 50 to 200 angstrom based on Raman spectra analysis.

17. The method of manufacturing an insulating gate field effect transistor of claim 1 wherein the crystallization of the semiconductor film is conducted by heating at 450 to 700 C.

18. The method of manufacturing an insulating gate field effect transistor of claim 1 wherein the crystallization of the semiconductor film is conducted by irradiation of laser.

19. The method of manufacturing an insulating gate field effect transistor of claim 1 wherein the crystallization of the semiconductor film is conducted by irradiation of a halogen lamp.

20. The method of manufacturing an insulating gate field effect transistor of claim 1 wherein the step of formation of said source and drain regions is performed after said step of crystallizing said semiconductor film.

3. A method of manufacturing an insulated gate field effect transistor comprising:

preparing a multi-chamber system having at least first and second chambers that can be airtightly isolated, respectively;

forming a gate electrode on an insulating surface of a substrate;

forming a gate insulating film comprising silicon oxide over said gate electrode in said first chamber;

transferring the substrate after forming said gate insulating film from said first chamber to said second chamber without exposing said gate insulating film to air;

forming a semiconductor film comprising amorphous silicon on said gate insulating film in said second chamber, said semiconductor film containing hydrogen and having a portion to become a channel region of said transistor;

crystallizing said semiconductor film including said portion after the formation of said semiconductor film; and

forming source and drain regions with said channel region extending therebetween;

wherein said semiconductor film after the crystallization exhibits a Raman shift to a small wave number direction from 520 cm<sup>−

1</sup>.

21. The method of manufacturing an insulating gate field effect transistor of claim 3 wherein said semiconductor film contains hydrogen at a concentration not higher than 5 atom %.

22. The method of manufacturing an insulating gate field effect transistor of claim 3 wherein said semiconductor film has an electron mobility 50 to 300 cm²/Vs.

23. The method of manufacturing an insulating gate field effect transistor of claim 3 wherein said semiconductor film after the crystallization has an average diameter of crystals in the crystallized semiconductor film within 50 to 200 angstrom based on Raman spectra analysis.

24. The method of manufacturing an insulating gate field effect transistor of claim 3 wherein the crystallization of the semiconductor film is conducted by heating at 450 to 700 C.

25. The method of manufacturing an insulating gate field effect transistor of claim 3 wherein the crystallization of the semiconductor film is conducted by irradiation of laser.

26. The method of manufacturing an insulating gate field effect transistor of claim 3 wherein the crystallization of the semiconductor film is conducted by irradiation of a halogen lamp.

27. The method of manufacturing an insulating gate field effect transistor of claim 3 wherein said semiconductor film contains oxygen in a concentration not higher than 7×

10¹⁹ atoms/cm³.

28. The method of manufacturing an insulating gate field effect transistor of claim 3 wherein the step of formation of said source and drain regions is performed after said step of crystallizing said semiconductor film.

4. A method of manufacturing an insulated gate field effect transistor comprising:

forming a gate electrode on an insulating surface of a substrate;

forming a gate insulating film comprising silicon oxide over said gate electrode by sputtering using a sputtering gas containing oxygen;

forming a semiconductor film comprising amorphous silicon on said gate insulating film by sputtering using a sputtering gas containing hydrogen after the formation of said gate insulating film wherein said gate insulating film is not exposed to air before the formation of said semiconductor film, said semiconductor film containing hydrogen and having a portion to become a channel region of said transistor;

crystallizing said semiconductor film including said portion after the formation of said semiconductor film; and

forming source and drain regions with said channel region extending therebetween;

wherein said semiconductor film after the crystallization exhibits a Raman shift to a small wave number direction from 520 cm<sup>−

1</sup>.

5. A method according to claim 4 wherein the sputtering for said gate insulating film is an r.f. sputtering.

29. The method of manufacturing an insulating gate field effect transistor of claim 4 wherein said semiconductor film contains hydrogen at a concentration not higher than 5 atom %.

30. The method of manufacturing an insulating gate field effect transistor of claim 4 wherein said semiconductor film has an electron mobility 50 to 300 cm²/Vs.

31. The method of manufacturing an insulating gate field effect transistor of claim 4 wherein said semiconductor film after the crystallization has an average diameter of crystals in the crystallized semiconductor film within 50 to 200 angstrom based on Raman spectra analysis.

32. The method of manufacturing an insulating gate field effect transistor of claim 4 wherein the crystallization of the semiconductor film is conducted by heating at 450 to 700 C.

33. The method of manufacturing an insulating gate field effect transistor of claim 4 wherein the crystallization of the semiconductor film is conducted by irradiation of laser.

34. The method of manufacturing an insulating gate field effect transistor of claim 4 wherein the crystallization of the semiconductor film is conducted by irradiation of a halogen lamp.

35. The method of manufacturing an insulating gate field effect transistor of claim 4 wherein said semiconductor film contains oxygen in a concentration not higher than 7×

10¹⁹ atoms/cm³.

36. The method of manufacturing an insulating gate field effect transistor of claim 4 wherein the step of formation of said source and drain regions is performed after said step of crystallizing said semiconductor film.

6. A method of manufacturing an insulated gate field effect transistor comprising:

preparing a multi-chamber system having at least first and second chambers that can be airtightly isolated, respectively;

forming a gate electrode on an insulating surface of a substrate;

forming a gate insulating film comprising silicon oxide over said gate electrode by sputtering using a sputtering gas containing oxygen in said first chamber;

transferring the substrate after the formation of said gate insulating film from said first chamber to said second chamber without exposing said gate insulating film to air;

forming a semiconductor film comprising amorphous silicon on said gate insulating film by sputtering using a sputtering gas containing hydrogen in said second chamber, said semiconductor film containing hydrogen and having a portion to become a channel region of said transistor;

crystallizing said semiconductor film including said portion after the formation of said semiconductor film; and

forming source and drain regions with said channel region extending therebetween;

wherein said semiconductor film after the crystallization exhibits a Raman shift to a small wave number direction from 520 cm<sup>−

1</sup>.

7. A method according to claim 6 wherein the sputtering for said gate insulating film is an r.f. sputtering.

37. The method of manufacturing an insulating gate field effect transistor of claim 6 wherein said semiconductor film contains hydrogen at a concentration not higher than 5 atom %.

38. The method of manufacturing an insulating gate field effect transistor of claim 6 wherein said semiconductor film has an electron mobility 50 to 300 cm²/Vs.

39. The method of manufacturing an insulating gate field effect transistor of claim 6 wherein said semiconductor film after the crystallization has an average diameter of crystals in the crystallized semiconductor film within 50 to 200 angstrom based on Raman spectra analysis.

40. The method of manufacturing an insulating gate field effect transistor of claim 6 wherein the crystallization of the semiconductor film is conducted by heating at 450 to 700 C.

41. The method of manufacturing an insulating gate field effect transistor of claim 6 wherein the crystallization of the semiconductor film is conducted by irradiation of laser.

42. The method of manufacturing an insulating gate field effect transistor of claim 6 wherein the crystallization of the semiconductor film is conducted by irradiation of a halogen lamp.

43. The method of manufacturing an insulating gate field effect transistor of claim 6 wherein said semiconductor film contains oxygen in a concentration not higher than 7×

10¹⁹ atoms/cm³.

44. The method of manufacturing an insulating gate field effect transistor of claim 6 wherein the step of formation of said source and drain regions is performed after said step of crystallizing said semiconductor film.

8. A method of manufacturing an insulated gate field effect transistor having a channel region comprising a single semiconductor layer comprising:

forming an insulating film comprising silicon oxide over a substrate;

forming a semiconductor film comprising amorphous silicon on said insulating film successively after the formation of said insulating film without exposing said insulating film to air, said semiconductor film containing hydrogen and having a portion to become a channel region of said transistor,

crystallizing said semiconductor film including said portion after the formation of said semiconductor film;

wherein said semiconductor film after the crystallization exhibits a Raman shift to a small wave number direction from 520 cm<sup>−

1</sup>.

45. The method of manufacturing an insulating gate field effect transistor of claim 8 wherein said semiconductor film contains hydrogen at a concentration not higher than 5 atom %.

46. The method of manufacturing an insulating gate field effect transistor of claim 8 wherein said semiconductor film has an electron mobility 50 to 300 cm²/Vs.

47. The method of manufacturing an insulating gate field effect transistor of claim 8 wherein said semiconductor film after the crystallization has an average diameter of crystals in the crystallized semiconductor film within 50 to 200 angstrom based on Raman spectra analysis.

48. The method of manufacturing an insulating gate field effect transistor of claim 8 wherein the crystallization of the semiconductor film is conducted by heating at 450 to 700 C.

49. The method of manufacturing an insulating gate field effect transistor of claim 8 wherein the crystallization of the semiconductor film is conducted by irradiation of laser.

50. The method of manufacturing an insulating gate field effect transistor of claim 8 wherein the crystallization of the semiconductor film is conducted by irradiation of a halogen lamp.

51. The method of manufacturing an insulating gate field effect transistor of claim 8 wherein said semiconductor film contains oxygen in a concentration not higher than 7×

10¹⁹ atoms/cm³.

52. The method of manufacturing an insulating gate field effect transistor of claim 8 further comprising a step of forming source and drain regions with said channel region extending therebetween after said step of crystallizing said semiconductor film.

9. A method of manufacturing an insulated gate field effect transistor having a channel region comprising a single semiconductor layer comprising:

preparing a multi-chamber system having at least first and second chambers that can be airtightly isolated, respectively;

forming an insulating film comprising silicon oxide over a substrate in said first chamber;

transferring the substrate after forming said insulating film from said first chamber to said second chamber without exposing said insulating film;

forming a semiconductor film comprising amorphous silicon on said insulating film in said second chamber, said semiconductor film containing hydrogen and having a portion to become a channel region of said transistor;

crystallizing said semiconductor film including said portion after the formation of said semiconductor film;

wherein said semiconductor film after the crystallization exhibits a Raman shift to a small wave number direction from 520 cm<sup>−

1</sup>.

53. The method of manufacturing an insulating gate field effect transistor of claim 9 wherein said semiconductor film contains hydrogen at a concentration not higher than 5 atom %.

54. The method of manufacturing an insulating gate field effect transistor of claim 9 wherein said semiconductor film has an electron mobility 50 to 300 cm²/Vs.

55. The method of manufacturing an insulating gate field effect transistor of claim 9 wherein said semiconductor film after the crystallization has an average diameter of crystals in the crystallized semiconductor film within 50 to 200 angstrom based on Raman spectra analysis.

56. The method of manufacturing an insulating gate field effect transistor of claim 9 wherein the crystallization of the semiconductor film is conducted by heating at 450 to 700 C.

57. The method of manufacturing an insulating gate field effect transistor of claim 9 wherein the crystallization of the semiconductor film is conducted by irradiation of laser.

58. The method of manufacturing an insulating gate field effect transistor of claim 9 wherein the crystallization of the semiconductor film is conducted by irradiation of a halogen lamp.

59. The method of manufacturing an insulating gate field effect transistor of claim 9 wherein said semiconductor film contains oxygen in a concentration not higher than 7×

10¹⁹ atoms/cm³.

60. The method of manufacturing an insulating gate field effect transistor of claim 9 further comprising a step of forming source and drain regions with said channel region extending therebetween after said step of crystallizing said semiconductor film.

10. A method of manufacturing an insulated gate field effect transistor having a channel region comprising a single semiconductor layer comprising:

forming an insulating film comprising silicon oxide over a substrate by sputtering using a sputtering gas containing oxygen;

forming a semiconductor film comprising amorphous silicon on said insulating film by sputtering using a sputtering gas containing hydrogen after the formation of said insulating film wherein said insulating film is not exposed to air before the formation of said semiconductor film, said semiconductor film containing hydrogen and having a portion to become a channel region of said transistor;

crystallizing said semiconductor film including said portion after the formation of said semiconductor film;

wherein said semiconductor film after the crystallization exhibits a Raman shift to a small wave number direction from 520 cm<sup>−

1</sup>.

61. The method of manufacturing an insulating gate field effect transistor of claim 10 wherein said semiconductor film contains hydrogen at a concentration not higher than 5 atom %.

62. The method of manufacturing an insulating gate field effect transistor of claim 10 wherein said semiconductor film has an electron mobility 50 to 300 cm²/Vs.

63. The method of manufacturing an insulating gate field effect transistor of claim 10 wherein said semiconductor film after the crystallization has an average diameter of crystals in the crystallized semiconductor film within 50 to 200 angstrom based on Raman spectra analysis.

64. The method of manufacturing an insulating gate field effect transistor of claim 10 wherein the crystallization of the semiconductor film is conducted by heating at 450 to 700 C.

65. The method of manufacturing an insulating gate field effect transistor of claim 10 wherein the crystallization of the semiconductor film is conducted by irradiation of laser.

66. The method of manufacturing an insulating gate field effect transistor of claim 10 wherein the crystallization of the semiconductor film is conducted by irradiation of a halogen lamp.

67. The method of manufacturing an insulating gate field effect transistor of claim 10 wherein said semiconductor film contains oxygen in a concentration not higher than 7×

10¹⁹ atoms/cm³.

68. The method of manufacturing an insulating gate field effect transistor of claim 10 further comprising a step of forming source and drain regions with said channel region extending therebetween after said step of crystallizing said semiconductor film.

11. A method of manufacturing an insulated gate field effect transistor having a channel region comprising a single semiconductor layer comprising:

preparing a multi-chamber system having at least first and second chambers that can be airtightly isolated, respectively;

forming an insulating film comprising silicon oxide over said gate electrode by sputtering using a sputtering gas containing oxygen in said first chamber;

transferring the substrate after the formation of said insulating film from said first chamber to said second chamber without exposing said insulating film to air;

forming a semiconductor film comprising amorphous silicon on said insulating film by sputtering using a sputtering gas containing hydrogen in said second chamber, said semiconductor film containing hydrogen and having a portion to become a channel region of said transistor;

crystallizing said semiconductor film including said portion after the formation of said semiconductor film;

wherein said semiconductor film after the crystallization exhibits a Raman shift to a small wave number direction from 520 cm<sup>−

1</sup>.

69. The method of manufacturing an insulating gate field effect transistor of claim 11 wherein said semiconductor film contains hydrogen at a concentration not higher than 5 atom %.

70. The method of manufacturing an insulating gate field effect transistor of claim 11 wherein said semiconductor film has an electron mobility 50 to 300 cm²/Vs.

71. The method of manufacturing an insulating gate field effect transistor of claim 11 wherein said semiconductor film after the crystallization has an average diameter of crystals in the crystallized semiconductor film within 50 to 200 angstrom based on Raman spectra analysis.

72. The method of manufacturing an insulating gate field effect transistor of claim 11 wherein the crystallization of the semiconductor film is conducted by heating at 450 to 700 C.

73. The method of manufacturing an insulating gate field effect transistor of claim 11 wherein the crystallization of the semiconductor film is conducted by irradiation of laser.

74. The method of manufacturing an insulating gate field effect transistor of claim 11 wherein the crystallization of the semiconductor film is conducted by irradiation of a halogen lamp.

75. The method of manufacturing an insulating gate field effect transistor of claim 11 wherein said semiconductor film contains oxygen in a concentration not higher than 7×

10¹⁹ atoms/cm³.

76. The method of manufacturing an insulating gate field effect transistor of claim 11 further comprising a step of forming source and drain regions with said channel region extending therebetween after said step of crystallizing said semiconductor film.

12. A method of manufacturing an insulated gate field effect transistor comprising:

preparing a multi-chamber system having at least first, second and third chambers wherein said third chamber is commonly connected to said first and second chambers through valves;

forming a gate electrode on an insulating surface of a substrate;

forming a gate insulating film comprising silicon oxide over said gate electrode in said first chamber;

transferring the substrate after forming said gate insulating film from said first chamber to said second chamber through said third chamber;

forming a semiconductor film comprising amorphous silicon on said gate insulating film in said second chamber, said semiconductor film containing hydrogen and having a portion to become a channel region of said transistor;

crystallizing said semiconductor film including said portion after the formation of said semiconductor film; and

wherein said semiconductor film after the crystallization exhibits a Raman shift to a small wave number direction from 520 cm<sup>−

1</sup>.

77. The method of manufacturing an insulating gate field effect transistor of claim 12 wherein said semiconductor film contains hydrogen at a concentration not higher than 5 atom %.

78. The method of manufacturing an insulating gate field effect transistor of claim 12 wherein said semiconductor film has an electron mobility 50 to 300 cm²/Vs.

79. The method of manufacturing an insulating gate field effect transistor of claim 12 wherein said semiconductor film after the crystallization has an average diameter of crystals in the crystallized semiconductor film within 50 to 200 angstrom based on Raman spectra analysis.

80. The method of manufacturing an insulating gate field effect transistor of claim 12 wherein the crystallization of the semiconductor film is conducted by heating at 450 to 700 C.

81. The method of manufacturing an insulating gate field effect transistor of claim 12 wherein the crystallization of the semiconductor film is conducted by irradiation of laser.

82. The method of manufacturing an insulating gate field effect transistor of claim 12 wherein the crystallization of the semiconductor film is conducted by irradiation of a halogen lamp.

83. The method of manufacturing an insulating gate field effect transistor of claim 12 wherein said semiconductor film contains oxygen in a concentration not higher than 7×

10¹⁹ atoms/cm³.

84. The method of manufacturing an insulating gate field effect transistor of claim 12 further comprising a step of forming source and drain regions with said channel region extending therebetween after said step of crystallizing said semiconductor film.

13. A method of manufacturing an insulated gate field effect transistor having a channel region comprising a single semiconductor layer comprising:

preparing a multi-chamber system having at least first, second and third chambers wherein said third chamber is commonly connected to said first and second chambers through valves;

forming an insulating film comprising silicon oxide over said gate electrode by sputtering using a sputtering gas containing oxygen in said first chamber;

transferring the substrate after the formation of said insulating film from said first chamber to said second chamber through said third chamber;

forming a semiconductor film comprising amorphous silicon on said insulating film by sputtering using a sputtering gas containing hydrogen in said second chamber, said semiconductor film containing hydrogen and having a portion to become a channel region of said transistor;

crystallizing said semiconductor film including said portion after the formation of said semiconductor film;

wherein said semiconductor film after the crystallization exhibits a Raman shift to a small wave number direction from 520 cm<sup>−

1</sup>.

85. The method of manufacturing an insulating gate field effect transistor of claim 13 wherein said semiconductor film contains hydrogen at a concentration not higher than 5 atom %.

86. The method of manufacturing an insulating gate field effect transistor of claim 13 wherein said semiconductor film has an electron mobility 50 to 300 cm²/Vs.

87. The method of manufacturing an insulating gate field effect transistor of claim 13 wherein said semiconductor film after the crystallization has an average diameter of crystals in the crystallized semiconductor film within 50 to 200 angstrom based on Raman spectra analysis.

88. The method of manufacturing an insulating gate field effect transistor of claim 13 wherein the crystallization of the semiconductor film is conducted by heating at 450 to 700 C.

89. The method of manufacturing an insulating gate field effect transistor of claim 13 wherein the crystallization of the semiconductor film is conducted by irradiation of laser.

90. The method of manufacturing an insulating gate field effect transistor of claim 13 wherein the crystallization of the semiconductor film is conducted by irradiation of a halogen lamp.

91. The method of manufacturing an insulating gate field effect transistor of claim 13 wherein said semiconductor film contains oxygen in a concentration not higher than 7×

10¹⁹ atoms/cm³.

92. The method of manufacturing an insulating gate field effect transistor of claim 13 further comprising a step of forming source and drain regions with said channel region extending therebetween after said step of crystallizing said semiconductor film.

93. A method of manufacturing an insulated gate field effect transistor comprising:

forming a gate electrode on an insulating surface of a substrate;

forming a gate insulating film by sputtering over said gate electrode;

forming a semiconductor film comprising amorphous silicon on said gate insulating film successively by sputtering after the formation of said gate insulating film without exposing said gate insulating film to air, said semiconductor film comprising hydrogen and having a portion to become a channel region of said transistor, and

forming source and drain regions with said channel region extending therebetween.

100. The method according to claim 93, 94, 95, 96, 97, 98 or 99 wherein the sputtering for forming said insulating film is r.f. sputtering.

101. The method according to claim 93, 94, 95, 96, 97, 98 or 99 wherein the sputtering for forming said semiconductor film is r.f. sputtering.

102. The method according to claim 93, 94, 95, 96, 97, 98 or 99 wherein said semiconductor film contains hydrogen at a concentration not higher than 5 atom %.

103. The method according to claim 93, 94, 95, 96, 97, 98 or 99 wherein said semiconductor film further comprises germanium.

104. The method according to claim 93, 94, 95, 96, 97, 98 or 99 wherein said semiconductor film contains oxygen in a concentration not higher than 7×

10¹⁹ atoms/cm³.

105. The method according to claim 93, 94, 95, 96, 97, 98 or 99 wherein the sputtering for forming said semiconductor film is conducted in a gas containing SiH₄ or Si₂H₆.

106. The method according to claim 93, 94, 95, 96, 97, 98 or 99 wherein the sputtering for forming the insulating film is conducted by using a target comprising artificial quartz.

107. The method according to claim 93, 94, 95, 96, 97, 98 or 99 wherein the sputtering for forming the insulating film is conducted by using a target comprising crystalline silicon having a purity of 99.999% or more.

108. The method according to claim 93, 94, 95, 96, 97, 98 or 99 wherein said semiconductor film contains oxygen in a concentration not higher than 1×

10¹⁹ atoms/cm³.

109. The method according to claim 93, 94, 95, 96, 97, 98 or 99 wherein said gate insulating film comprises silicon oxide.

94. A method of manufacturing an insulated gate field effect transistor comprising:

preparing a multi-chamber system having at least first and second chambers that can be airtightly isolated, respectively;

forming a gate electrode on an insulating surface of a substrate;

forming a gate insulating film by sputtering over said gate electrode in said first chamber;

transferring the substrate after forming said gate insulating film from said first chamber to said second chamber without exposing said gate insulating film to air;

forming a semiconductor film comprising amorphous silicon by sputtering on said gate insulating film in said second chamber, said semiconductor film containing hydrogen and having a portion to become a channel region of said transistor; and

forming source and drain regions with said channel region extending therebetween.

95. A method of manufacturing an insulated gate field effect transistor comprising:

forming a gate electrode on an insulating surface of a substrate;

forming a gate insulating film over said gate electrode by sputtering using a sputtering gas containing oxygen;

forming a semiconductor film comprising amorphous silicon on said gate insulating film by sputtering using a sputtering gas containing hydrogen after the formation of said gate insulating film wherein said gate insulating film is not exposed to air before the formation of said semiconductor film, said semiconductor film containing hydrogen and having a portion to become a channel region of said transistor; and

forming source and drain regions with said channel region extending therebetween.

96. A method of manufacturing an insulated gate field effect transistor comprising:

preparing a multi-chamber system having at least first and second chambers that can be airtightly isolated, respectively;

forming a gate electrode on an insulating surface of a substrate;

forming a gate insulating film over said gate electrode by sputtering using a sputtering gas containing oxygen in said first chamber;

transferring the substrate after the formation of said gate insulating film from said first chamber to said second chamber without exposing said gate insulating film to air;

forming a semiconductor film comprising amorphous silicon on said gate insulating film by sputtering using a sputtering gas containing hydrogen in said second chamber, said semiconductor film containing hydrogen and having a portion to become a channel region of said transistor; and

forming source and drain regions with said channel region extending therebetween.

97. A method of manufacturing an insulated gate field effect transistor having a channel region comprising a single semiconductor layer comprising:

preparing a multi-chamber system having at least first and second chambers that can be airtightly isolated, respectively;

forming a gate electrode over a substrate;

forming an insulating film over said gate electrode by sputtering using a sputtering gas containing oxygen in said first chamber;

transferring the substrate after the formation of said insulating film from said first chamber to said second chamber without exposing said insulating film to air;

forming a semiconductor film comprising amorphous silicon on said insulating film by sputtering using a sputtering gas containing hydrogen in said second chamber, said semiconductor film containing hydrogen and having a portion to become a channel region of said transistor.

98. A method of manufacturing an insulated gate field effect transistor comprising:

preparing a multi-chamber system having at least first, second and third chambers wherein said third chamber is commonly connected to said first and second chambers through valves;

forming a gate electrode on an insulating surface of a substrate;

forming a gate insulating film by sputtering over said gate electrode in said first chamber;

transferring the substrate after forming said gate insulating film from said first chamber to said second chamber through said third chamber;

forming a semiconductor film comprising amorphous silicon by sputtering on said gate insulating film in said second chamber, said semiconductor film containing hydrogen and having a portion to become a channel region of said transistor.

99. A method of manufacturing an insulated gate field effect transistor having a channel region comprising a single semiconductor layer comprising:

preparing a multi-chamber system having at least first, second and third chambers wherein said third chamber is commonly connected to said first and second chambers through valves;

forming an insulating film over said gate electrode by sputtering using a sputtering gas containing oxygen in said first chamber;

transferring the substrate after the formation of said insulating film from said first chamber to said second chamber through said third chamber;

forming a semiconductor film comprising amorphous silicon on said insulating film by sputtering using a sputtering gas containing hydrogen in said second chamber, said semiconductor film containing hydrogen and having a portion to become a channel region of said transistor.