CMOS image sensor with equivalent potential diode

• US 6,180,969 B1
• Filed: 02/26/1999
• Issued: 01/30/2001
• Est. Priority Date: 02/28/1998
• Status: Expired due to Term

• Current Assignee: Photonic Imaging Solutions Inc. (Quest Patent Research Corporation)
• Original Assignee: Hyundai Electronics Industries Co. Ltd. (SK Hynix Inc.)
• Inventors: Yang, Woodward, Lee, Ju Il, Lee, Nan Yi
• Primary Examiner(s): MINTEL, WILLIAM A
• Application Number:
  US09/258,307
• Time in Patent Office: 704 Days
• Field of Search: 257/292, 257/291, 438/90, 438/73
• US Class Current: 257/291
• CPC Class Codes: H01L 27/1443 with at least one potential jump or surface barrier
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70

Abstract

A CMOS image sensor according to the present invention has a low-voltage photodiode which is fully depleted at a bias of 1.2-4.5V. The photodiode comprises: a P-epi layer; a field oxide layer dividing the P-epi layer into a field region and an active region; a N⁻ region formed within the P-epi layer, wherein the first impurity region is apart from the isolation layer; and a P⁰ region of the conductive type formed beneath a surface of the P-epi layer and on the N⁻ region, wherein a width of the P⁰ region is wider than that of the N⁻ region so that a portion of the P⁰ region is formed on the P-epi layer, whereby the P⁰ region has the same potential as the P-epi layer.

Claims

1. A CMOS image sensing device comprising:

a semiconductor layer of a first conductive type;

a well region of the first conductive type, being locally positioned at the semiconductor layer;

a photodiode formed in the semiconductor layer for sensing light from an object;

at least one depletion transistor formed in the semiconductor layer for transferring photoelectric charges generated in the photodiode to a floating junction which is formed on a portion of the semiconductor layer and which stores the photoelectric charges; and

at least one enhancement transistor formed in the well region for outputting electrical signals in response to an amount of the photoelectric charges transferred from the floating junction.

2. The CMOS image sensing device in accordance with claim 1, wherein the depletion transistor has a negative threshold voltage and wherein the CMOS image sensing device further comprises a reset transistor formed in the semiconductor layer, and wherein the reset transistor has a negative threshold voltage for resetting a potential at the floating junction.

3. The CMOS image sensing device in accordance with claim 1, wherein the floating junction is a highly doped region of a second conductive type, which is formed in the semiconductor layer and between the depletion transistor and the reset transistor.

4. The CMOS image sensing device in accordance with claim 1, wherein the photodiode comprises:

a first impurity region of a second conductive type, being formed within the semiconductor layer, wherein the first impurity region is apart from an isolation layer; and

a second impurity region of the first conductive type, being formed beneath a surface of the semiconductor layer and on the first impurity region, wherein a width of the second impurity region is wider than that of the first impurity region so that a portion of the second impurity region is in contact with the semiconductor layer directly,

whereby the second impurity region has the same potential as the semiconductor layer.

5. The CMOS image sensing device in accordance with claim 4, wherein the photodiode has a full depletion layer in the semiconductor layer at approximately 1.2-4.5V.

6. The CMOS image sensing device in accordance with claim 4, wherein the photodiode further comprises a semiconductor substrate of the first conductive type, which is formed beneath the semiconductor layer, wherein an impurity concentration of the semiconductor substrate is higher than that of the semiconductor layer.

7. The CMOS image sensing device in accordance with claim 6, wherein a resistivity of the semiconductor layer is in a range of approximately 10-25 ω

cm and a resistivity of the semiconductor substrate is about 0.01 ω

cm.

8. The CMOS image sensing device in accordance with claim 6, wherein the semiconductor layer is an epitaxial layer grown on the semiconductor substrate.

9. The CMOS image sensing device in accordance with claim 6, wherein a thickness of the semiconductor layer is in a range of approximately 2-5 μ

m.

10. The CMOS image sensing device in accordance with claim 9, wherein the epitaxial layer is formed to an impurity concentration of approximately 10¹⁴ ions/cm³.

11. The CMOS image sensing device in accordance with claim 10, wherein the second impurity region is formed to an impurity concentration of approximately 10¹⁸ ions/cm³.

12. The CMOS image sensing device in accordance with claim 11, wherein the first impurity region is formed to an impurity concentration of approximately 10¹⁷ ions/cm³.

13. The CMOS image sensing device in accordance with claim 4, wherein the first conductive type is a P-type and the second conductive type is an N-type.

14. A CMOS image sensing device comprising:

a semiconductor layer of a first conductive type;

a well region of the first conductive type, being locally positioned at the semiconductor layer;

at least one photodiode formed in the semiconductor layer and outside of the well region for sensing light from an object;

a floating junction for storing photoelectric charges generated in the photodiode;

a first depletion transistor formed outside of the well region and between the photodiode and the floating junction for transferring the photoelectric charges to the floating junction, and wherein the first depletion transistor is controlled in response to a first control signal;

a second depletion transistor formed outside of the well region and coupled to the floating junction for resetting the floating junction to a predetermined potential;

a first enhancement transistor formed in the well region and for outputting electrical signals in response to an amount of the photoelectric charges stored in the floating junction, wherein a common active region of the second depletion transistor and the first enhancement transistor is positioned at a boundary between the semiconductor layer and the well region; and

a second enhancement transistor formed in the well region and receiving address signals for selecting a pixel.

15. The CMOS image sensing device in accordance with claim 14, wherein the first and second enhancement transistors have a lightly doped drain (LDD) structure.

16. The CMOS image sensing device in accordance with claim 14, wherein the photodiode comprises:

a first impurity region of a second conductive type, being formed within the semiconductor layer, wherein the first impurity region is apart from an isolation layer; and

a second impurity region of the first conductive type, being formed beneath a surface of the semiconductor layer and on the first impurity region, wherein a width of the second impurity region is wider than that of the first impurity region so that a portion of the second impurity region is in contact with the semiconductor layer directly,

whereby the second impurity region has the same potential as the semiconductor layer.

17. The CMOS image sensing device in accordance with claim 16, wherein the photodiode has a full depletion layer in the semiconductor layer at approximately 1.2-4.5V.

18. The CMOS image sensing device in accordance with claim 16, wherein the semiconductor layer is an epitaxial layer formed on a semiconductor substrate of the first conductive type.

19. The CMOS image sensing device in accordance with claim 16, wherein the first or second depletion transistor has a gate electrode including a polysilicon layer and a silicide layer.

20. The CMOS image sensing device in accordance with claim 16, wherein the first or second depletion transistor has a spacer insulating layer formed on a gate electrode thereof.