Photovoltaic device

• US 6,184,456 B1
• Filed: 12/04/1997
• Issued: 02/06/2001
• Est. Priority Date: 12/06/1996
• Status: Expired due to Fees

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Matsuda, Koichi, Matsuyama, Jinsho
• Primary Examiner(s): CHAPMAN, MARK A
• Application Number:
  US08/985,312
• Time in Patent Office: 1,160 Days
• Field of Search: 136/256, 136/258 PC
• US Class Current: 136/256
• CPC Class Codes: H01L 31/0368 including polycrystalline semiconductors H01L31/0392 takes precedence
• CPC Class Codes: H01L 31/056 the light-reflecting means being of the back surface reflector [BSR] type
• CPC Class Codes: Y02E 10/52 PV systems with concentrators

Abstract

A photovoltaic device of the present invention has a non-single-crystal semiconductor. A layer underlying the non-single-crystal semiconductor has a polycrystalline structure. Individual grains of the polycrystal exposed in the surface of the underlying layer have smooth surfaces. The surface of the underlying layer has a step along the grain boundaries of the polycrystal, or a protrusion or recess at the grain boundaries. Alternatively, polycrystal grains having rough surfaces and polycrystal grains having smooth surfaces commonly exist in the surface of the polycrystalline layer. The polycrystalline layer may be a substrate of the photovoltaic device. The present invention, by virtue of the use of such a polycrystalline layer, provides a highly reliable and efficient thin-film photovoltaic device which enhances light absorption by the semiconductor layer and which can be produced at a high yield even at a practically adoptable low cost, while eliminating deficiencies of known arts in regard to workability, yield and durability.

Claims

1. A photovoltaic device comprising:

a substrate made of a polycrystalline material; and

a non-single-crystal semiconductor formed on said substrate;

wherein polycrystal grains having a smooth surface parallel to a principal surface of said substrate and polycrystal grains having a rough surface not parallel to the principal surface of said substrate exist in the surface of said substrate.

2. A photovoltaic device according to claim 1, further comprising a metallic back-side reflection layer formed on said substrate, a transparent conductive layer formed on said metallic back-side reflection layer, and a non-single-crystal semiconductor formed on said transparent conductive layer.

3. A photovoltaic device according to claim 2, wherein the surface of said transparent conductive layer has different degrees of roughness corresponding to the polycrystal grain boundaries of said substrate.

4. A photovoltaic device according to claim 2, wherein the predominant amount of material of said metallic back-side reflection layer is at least one element selected from the group consisting of gold, silver, copper, aluminum and magnesium.

5. A photovoltaic device according to claim 1, wherein the surface of said metallic back-side reflection layer has different degrees of roughness corresponding to the polycrystal grain boundaries of said substrate.

6. A photovoltaic device according to claim 1, wherein the surface of said photovoltaic device has different degrees of roughness corresponding to the polycrystal grain boundaries of said substrate.

7. A photovoltaic device according to claim 1, wherein the surface of said substrate has a step along the polycrystal grain boundary, or a protrusion or a recess at the polycrystalline grain boundaries.

8. A photovoltaic device according to claim 7, wherein the height and depth of the step, protrusion or recess existing on the surface of said substrate along the polycrystalline crystal grain boundary ranges from 0.01 μ

m to 2 μ

m.

9. A photovoltaic device according to claim 1, wherein the predominant amount of material of said substrate is a metal or an alloy.

10. A photovoltaic device according to claim 1, wherein the difference in the degree of roughness of the surfaces of the individual polycrystal grains exposed on the surface of said substrate ranges from 0.01 μ

m to 1.5 μ

m in terms of the difference in Rmax.

11. A photovoltaic device according to claim 1, wherein the mean grain size of the polycrystal grains of said substrate ranges from 0.1 μ

m to 2 mm.

12. A photovoltaic device comprising.

a substrate;

and

a polycrystalline film and a non-single-crystal semiconductor which are formed on said substrate;

wherein each of the individual polycrystal grains of said polycrystalline film has a smooth surface parallel to a principal surface of said substrate, and the surface of said polycrystalline film has a step along the polycrystal grain boundary, or a protrusion or recess at the grain boundary and wherein the predominant amount of material of said polycrystalline film is at least one element selected from the group consisting of gold, silver, copper, aluminum and magnesium.

17. A photovoltaic device according to claim 12, 13 or 16, wherein the surface of said photovoltaic device has a step, protrusion or a recess corresponding to the polycrystal grain boundary of said polycrystalline film.

18. A photovoltaic device according to claim 12, 13 or 16, wherein the height or depth of the step, protrusion or recess at the polycrystal grain boundary ranges from 0.1 μ

m to 2 μ

m.

19. A photovoltaic device according to claim 12, 13 or 16, wherein the mean grain size of said polycrystal of said polycrystalline film ranges from 0.1 μ

m to 2 mm.

20. A photovoltaic device according to claim 12, 13 or 16, wherein a degree of roughness of the surface of said substrate ranges from 0.01 μ

m to 1 μ

m in terms of Rmax.

13. A photovoltaic device comprising:

in sequence

a substrate;

a polycrystalline film;

a transparent conductive layer and a non-single-crystal semiconductor which are formed on said substrate;

wherein each of the individual polycrystal grains of said polycrystalline film has a smooth surface parallel to a principal surface of said substrate, and the surface of said polycrystalline film has a step along the polycrystal grain boundary, or a protrusion or recess at the grain boundary.

14. A photovoltaic device according to claim 13 wherein the predominant amount of material of said polycrystalline film is a metal or an alloy.

15. A photovoltaic device according to claim 13, wherein the surface of said transparent conductive layer has a step, protrusion or a recess corresponding to the polycrystal grain boundary of said polycrystalline film.

16. A photovoltaic device comprising:

a substrate and;

a polycrystalline film and a non-single-crystal semiconductor which are formed on said substrate;

wherein said polycrystalline film is a transparent conductive layer and

wherein each of the individual polycrystal grains of said polycrystalline film has a smooth surface parallel to a principal surface of said substrate, and the surface of said polycrystalline film has a step along the polycrystal grain boundary, or a protrusion or recess at the grain boundary.

21. A photovoltaic device comprising:

a substrate; and

a polycrystalline film and a non-single-crystal semiconductor;

wherein polycrystal grains having a smooth surface parallel to a principal surface of said substrate and polycrystal grains having a rough surface not parallel to the principal surface of said substrate exist in the surface of said polycrystalline film.

22. A photovoltaic device according to claim 21, wherein the predominant amount of material of said polycrystalline film is a metal or an alloy.

23. A photovoltaic device according to claim 21, wherein the predominant amount of material of said polycrystalline film is at least one element selected the group consisting of gold, silver, copper, aluminum and magnesium.

24. A photovoltaic device according to claim 21, further comprising a transparent conductive layer intervening between said polycrystalline film and said non-single-crystal semiconductor.

25. A photovoltaic device according to claim 21, wherein the surface of said transparent conductive layer has a difference in the degree of roughness corresponding to the polycrystal grain boundary of said polycrystalline film.

26. A photovoltaic device according to claim 21, wherein said polycrystalline film is a transparent conductive layer.

27. A photovoltaic device according to claim 21 wherein the surface of said photovoltaic device has a difference in the degree of roughness corresponding to the polycrystal grain boundary of said polycrystalline film.

28. A photovoltaic device according to claim 21, wherein the surface of said polycrystalline film has a step along the polycrystal grain boundary, or a protrusion or a recess at the polycrystalline grain boundaries.

29. A photovoltaic device according to claim 21, wherein the difference in the degree of roughness of the individual polycrystal grains ranges from 0.01 μ

m to 1.5 μ

m in terms of Rmax.

30. A photovoltaic device according to claim 21, wherein the mean grain size of said polycrystal of said polycrystalline film ranges from 0.1 μ

m to 2 mm.

31. A photovoltaic device according to claim 21, wherein a degree of roughness of the surface of said substrate ranges from 0.01 μ

m to 1 μ

m in terms of Rmax.

32. A photovoltaic device according to claim 21, wherein the height or depth of the step, protrusion or recess along the polycrystal grain boundary ranges from 0.01 μ

m to 2 μ

m.