Optical semiconductor device

  • US 6,191,436 B1
  • Filed: 03/12/1996
  • Issued: 02/20/2001
  • Est. Priority Date: 03/13/1995
  • Status: Expired due to Term
First Claim
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1. An optical semiconductor device comprising:

  • an n-layer having n-conduction type;

    a p-layer having p-conduction type formed above said n-layer;

    an electrode formed uniformly on substantially the entire surface of said p-layer and capable of passing light therethrough;

    an electrode pad for wire bonding located on a portion of said electrode; and

    a highly resistive region formed in a part of said p-layer below said electrode pad, wherein said n-layer and said p-layer are made of a nitride compound semiconductor including at least one of aluminum (Al), gallium (Ga), and indium (In), said p-layer is a layer whose resistivity is lowered by annealing or electron beam irradiation said p-layer having an unchanged kind of impurity and an unchanged density of impurity, said highly resistive region is formed by said annealing or electron beam irradiation without lowering the resistivity.

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