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SOI based transistor having an independent substrate potential control

  • US 6,191,449 B1
  • Filed: 09/19/1997
  • Issued: 02/20/2001
  • Est. Priority Date: 09/19/1996
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising:

  • a semiconductor layer formed on an insulation layer;

    a source diffusion layer and a drain diffusion layer formed in said semiconductor layer, said source diffusion layer and said drain diffusion layer being in contact with said insulation layer;

    a first gate electrode disposed on a gate insulation film over a first region of said semiconductor located between said source diffusion layer and said drain diffusion layer, said first gate electrode having a bottom surface area substantially equal to an upper surface area of said first region;

    a substrate potential control layer coupled to said first region and having a portion formed in a second region of said semiconductor layer that is not under said first gate electrode; and

    a second gate electrode disposed on and in contact with said first gate electrode.

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