Cold plate arrangement for cooling processor and companion voltage regulator

• US 6,191,945 B1
• Filed: 01/29/1999
• Issued: 02/20/2001
• Est. Priority Date: 07/30/1997
• Status: Expired due to Term

• Current Assignee: Hewlett Packard Enterprise Development LP (Hewlett-Packard Enterprise Company)
• Original Assignee: Hewlett-Packard Company (HP Inc.)
• Inventors: Belady, Christian L., Cromwell, S. Daniel
• Primary Examiner(s): Picard, Leo P.
• Assistant Examiner(s): DATSKOVSKIY, MICHAIL V
• Application Number:
  US09/240,266
• Time in Patent Office: 753 Days
• Field of Search: 361/676, 361/697-699, 361/714-718, 361/719, 361/722, 361/691, 361/702-710, 257/706-727, 165/80.3, 165/80.4, 165/104.33, 165/104.34, 165/185, 298/900.3, 298/900.38, 298/40, 298/900.5, 298/900.4, 297/39, 324/72.5, 324/754, 324/840, 324/739, 324/890.05, 439/66, 174/16.3, 174/15.2, 174/252
• US Class Current: 361/704
• CPC Class Codes: H01L 23/427 Cooling by change of state, e.g. use of heat pipes by liquefied gas H01L23/445
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H05K 7/20 Modifications to facilitate cooling, ventilating, or heating

Abstract

A compact cooling method and apparatus arranged for simultaneously drawing heat from both a processor and from the voltage regulator. The invention provides for advantageous arrangement of the voltage regulator and memory proximate to the processor for high speed operation. The invention includes a processor requiring at least one bias voltage, and further includes a companion voltage regulator for providing the bias voltage. The voltage regulator is arranged sufficiently proximate to the processor, so as to limit inductance of electrical coupling therebetween.

Claims

1. An apparatus comprising:

a processor requiring at least one bias voltage;

a voltage regulator for providing the bias voltage;

electrical coupling between the voltage regulator and the processor for conducting the bias voltages thereto; and

at least one cold plate sandwiched between the processor and the voltage regulator and in thermal communication therewith and arranged for simultaneously drawing heat from the processor and from the voltage regulator, wherein a thickness dimension of the cold plate is within a range of approximately two millimeters to approximately seven millimeters.

2. An apparatus as in claim 1 wherein:

the cold plate has a first and second opposing major surface;

the voltage regulator has a major surface in thermal communication with the first major surface of the cold plate; and

the processor has a major surface in thermal communication with the second major surface of the cold plate.

3. An apparatus as in claim 1 wherein there is a proximate arrangement of the voltage regulator with the processor, so as to limit inductance of the electrical coupling therebetween.

4. An apparatus as in claim 3 wherein the proximate arrangement of the voltage regulator with the processor is within a range of approximately two millimeters to approximately twenty-five millimeters.

5. An apparatus as in claim 4 wherein the proximate arrangement of the voltage regulator with the processor is approximately four millimeters.

6. An apparatus as in claim 1 wherein a length of the electrical coupling between the voltage regulator and the processor is within a range of approximately two millimeters to approximately twenty-five millimeters, so as to limit inductance of the electrical coupling.

7. An apparatus as in claim 6 wherein the length of the electrical coupling between the voltage regulator and the processor is approximately four millimeters.

8. An apparatus as in claim 1 wherein an inductance of the electrical coupling between the voltage regulator and the processor is within a range of approximately point-one-five nanohenries to approximately point-six nanohenries.

9. An apparatus as in claim 8 wherein the inductance of the electrical coupling between the voltage regulator and the processor is approximately point-three nanohenries.

10. An apparatus as in claim 3 wherein a thickness dimension the cold plate sandwiched between the voltage regulator and processor is sufficiently thin so as to provide for the proximate arrangement of the voltage regulator with the processor.

11. An apparatus as in claim 1 further comprising a heat exchanger thermally coupled with the cold plate for drawing heat therefrom.

12. An apparatus as in claim 11 wherein the heat exchanger is in fluid communication with the cold plate.

13. An apparatus as in claim 11 wherein:

the cold plate and heat exchanger each include respective flow paths therethrough for circulating a fluid; and

the apparatus further includes a pair of fluid conduits coupled with the flow paths of the cold plate and the heat exchanger for circulating the fluid therebetween.

14. An apparatus as in claim 1 wherein:

the apparatus further comprises a memory; and

electrical coupling between the memory and the processor for conducting signals therebetween; and

wherein there is a proximate arrangement of the memory with the processor, so as to limit propagation delay of the signals through the electrical coupling.

15. An apparatus as in claim 14 wherein the proximate arrangement of the memory with the processor is substantially less than approximately forty centimeters.

16. An apparatus as in claim 15 wherein the proximate arrangement of the memory with the processor is within approximately thirty-eight centimeters.

17. An apparatus as in claim 14 wherein a length of the electrical coupling between the memory and the processor is substantially less than approximately forty centimeters.

18. An apparatus as in claim 17 wherein the length of the electrical coupling between the memory and the processor is within approximately thirty-eight centimeters.

19. A method comprising the steps of:

providing a voltage regulator, a processor and electrical coupling for conducting at least one bias voltage therebetween;

sandwiching a cold plate between the processor and the voltage regulator and in thermal communication therewith so that a thickness of the cold plate separating the processor and the voltage regulator is within a range of approximately two millimeters to approximately seven millimeters; and

using the cold plate to simultaneously draw heat from the processor and from the voltage regulator.

20. A method as in claim 19 further comprising the step of arranging of the voltage regulator sufficiently proximate to the processor, so as to limit inductance of the electrical coupling therebetween.

21. A method as in claim 19 further comprising the steps of:

providing a memory and electrical coupling between the memory and the processor for conducting signals therebetween;

arranging of the memory proximate to the processor, so as to limit propagation delay of the signals through the electrical coupling.

22. An apparatus comprising:

a processor requiring at least one bias voltage;

a voltage regulator for providing the bias voltage;

electrical coupling between the voltage regulator and the processor for conducting the bias voltages thereto;

at least one cold plate sandwiched between the processor and the voltage regulator and in thermal communication therewith and arranged for simultaneously drawing heat from the processor and from the voltage regulator, wherein a thickness dimension of the cold plate is within a range of approximately two millimeters to approximately seven millimeters; and

at least one memory, wherein the sandwiched processor, voltage regulator and cold plate are supported by a printed wiring board along with the memory.

23. An apparatus as in claim 22, comprising:

a heat exchanger coupled with the cold plate; and

a pump, the heat exchanger and the pump being supported by the printed wiring board.