CMOS imager with storage capacitor

• US 6,204,524 B1
• Filed: 07/14/1999
• Issued: 03/20/2001
• Est. Priority Date: 07/14/1999
• Status: Expired due to Term

• Current Assignee: Aptina Imaging Corporation (ON Semiconductor Corporation)
• Original Assignee: Micron Technology, Inc.
• Inventors: Rhodes, Howard E.
• Primary Examiner(s): Meier, Stephen D.
• Application Number:
  US09/352,947
• Time in Patent Office: 615 Days
• Field of Search: 257/222, 257/225, 257/223
• US Class Current: 257/222
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 27/14643 Photodiode arrays; MOS imagers
• CPC Class Codes: H01L 27/14689 MOS based technologies
• CPC Class Codes: H01L 28/90 having vertical extensions

Abstract

A CMOS imager having an improved signal to noise ratio and improved dynamic range is disclosed. The CMOS imager provides improved charge storage by fabricating a storage capacitor in parallel with the photocollection area of the imager. The storage capacitor may be a flat plate capacitor formed over the pixel, a stacked capacitor or a trench imager formed in the photosensor. The CMOS imager thus exhibits a better signal-to-noise ratio and improved dynamic range. Also disclosed are processes for forming the CMOS imager.

Claims

1. A photosensor for use in a CMOS imaging device, said photosensor comprising:

a doped layer of a first conductivity type formed in a substrate;

a charge collection region formed in said doped layer; and

a storage capacitor connected to said charge collection region to store charge accumulated by said charge collection region.

2. The photosensor according to claim 1, wherein said photosensor is selected from the group consisting of a photodiode and a photoconductor.

3. The photosensor according to claim 1, wherein said photosensor includes a photogate.

4. The photosensor according to claim 1, wherein said photosensor includes a photoconductor.

5. The photosensor according to claim 1, wherein said storage capacitor is a flat plate capacitor formed over said doped layer.

6. The photosensor according to claim 1, wherein said storage capacitor is a trench capacitor formed in said doped layer.

7. The photosensor according to claim 5, wherein said storage capacitor is formed over a non-light sensitive area of said photosensor.

8. The photosensor according to claim 1, wherein said storage capacitor is a stacked capacitor formed over said doped layer.

9. The photosensor according to claim 1, wherein said storage capacitor and said photosensor are formed on a single integrated circuit.

10. The photosensor according to claim 1, wherein said storage capacitor is connected to said charge collection region by a doped polysilicon contact.

11. The photosensor according to claim 1, wherein said storage capacitor is connected to said charge collection region by a tungsten contact.

12. A photosensor for use in a n imaging device formed in a single integrated circuit, said photosensor comprising:

a doped layer of a first conductivity type formed in a substrate;

a charge collection region formed in said doped layer;

a first doped region of a second conductivity type formed in said doped layer adjacent said charge collection region;

a storage capacitor; and

a contact connecting said first doped region to said storage capacitor.

13. The photosensor according to claim 12, further comprising a photogate for gating the accumulation of charge formed over said charge collection region.

14. The photosensor according to claim 12, wherein said photosensor is selected from the group consisting of a photodiode and a photoconductor.

15. The photosensor according to claim 12, further comprising an insulating layer formed over said photosensor.

16. The photosensor according to claim 12, wherein said contact is a doped polysilicon contact.

17. The photosensor according to claim 12, wherein said contact is a metal contact.

18. The photosensor according to claim 15, wherein said insulating layer is selected from the group consisting of USG, BPSG, PSG, BSG and amorphous silica glass.

19. The photosensor according to claim 15, wherein said storage capacitor is formed over said insulating layer.

20. The photosensor according to claim 15, wherein said storage capacitor is a stacked capacitor formed in said insulating layer.

21. The photosensor according to claim 20, wherein said stacked capacitor is a container capacitor.

22. The photosensor according to claim 12, wherein said storage capacitor is a flat plate capacitor including a first electrode, a second electrode and an insulating layer between said first and second electrodes.

23. The photosensor according to claim 22, wherein said contact connects said first doped region and said first electrode.

24. The photosensor according to claim 22, wherein said first and second electrodes are independently selected from the group consisting of doped polysilicon, tungsten, tungsten nitride and titanium nitride.

25. The photosensor according to claim 22, wherein said insulating layer is selected from the group consisting of oxides, nitrides, ONO, NO, ON, high-k dielectrics and ferroelectric materials.

26. The photosensor according to claim 25, wherein said insulating layer is an oxide.

27. The photosensor according to claim 26, wherein said insulating layer is silicon dioxide.

28. The photosensor according to claim 25, wherein said insulating layer is a nitride.

29. The photosensor according to claim 28, wherein said insulating layer is a silicon nitride.

30. The photosensor according to claim 12, wherein the first conductivity type is p-type, and the second conductivity type is n-type.

31. The photosensor according to claim 30, wherein said first doped region is doped with dopants selected from the group consisting of arsenic, antimony and phosphorous.

32. The photosensor according to claim 31, wherein said first doped region is doped with phosphorous.

33. The photosensor according to claim 12, further comprising a second doped region of a second conductivity formed in said doped layer adjacent a portion of said charge collection region opposite said first doped region.

34. The photosensor according to claim 33, further comprising a transfer transistor for transferring charge accumulated in said second doped region to a third doped region of said second conductivity type formed in said doped layer of said first conductivity type, wherein the gate of said transfer transistor is formed adjacent said second doped region.

35. The photosensor according to claim 34, wherein the first conductivity type is p-type, and the second conductivity type is n-type.

36. The photosensor according to claim 34, wherein said first, second and third doped regions are doped with dopants selected from the group consisting of arsenic, antimony and phosphorous.

37. The photosensor according to claim 36, wherein said first, second and third doped regions are doped with phosphorous.

38. The photosensor according to claim 34, further comprising a source follower transistor for outputting charge accumulated in said third doped region which has been transferred to said third doped region, wherein the gate of said source follower transistor is formed adjacent said third doped region.

39. The photosensor according to claim 38, further comprising an insulating layer formed over said photosensor.

40. The photosensor according to claim 39, wherein said insulating layer is selected from the group consisting of USG, BPSG, PSG, BSG and amorphous silica glass.

41. The photosensor according to claim 39, wherein said storage capacitor is formed over said insulating layer.

42. The photosensor according to claim 39, wherein said storage capacitor is formed over a field oxide region.

43. The photosensor according to claim 39, wherein said storage capacitor is formed over said transfer transistor.

44. The photosensor according to claim 39, wherein said storage capacitor is formed over said source follower transistor.

45. The photosensor according to claim 39, wherein said storage capacitor is a stacked capacitor formed in said insulating layer.

46. The photosensor according to claim 12, wherein said photosensor is used in a CMOS imager.

47. A photosensor for use in an imaging device, said photosensor comprising:

a doped layer of a first conductivity type formed in a substrate;

a charge collection region formed in said doped layer;

a first doped region of a second conductivity type formed in said doped layer adjacent said charge collection region; and

a trench storage capacitor formed in said substrate adjacent said first doped region and connected to said first doped region to store charge collected in said charge collection region.

48. The photosensor according to claim 47, wherein said photosensor includes a photogate for gating the accumulation of charge formed in said charge collection region.

49. The photosensor according to claim 47, wherein said photosensor is selected from the group consisting of a photodiode and a photoconductor.

50. The photosensor according to claim 47, wherein said trench storage capacitor includes a first electrode, a second electrode and an insulating layer between said first and second electrodes.

51. The photosensor according to claim 50, wherein said first and second electrodes are independently selected from the group consisting of doped polysilicon, tungsten, tungsten nitride and titanium nitride.

52. The photosensor according to claim 50, wherein said insulating layer is selected from the group consisting of an oxide layer, a nitride layer, an ONO layer, an NO layer and an ON layer.

53. The photosensor according to claim 52, wherein said insulating layer is an oxide layer.

54. The photosensor according to claim 53, wherein said insulating layer is a silicon oxide layer.

55. The photosensor according to claim 52, wherein said insulating layer is a nitride layer.

56. The photosensor according to claim 55, wherein said insulating layer is a silicon nitride layer.

57. The photosensor according to claim 47, wherein the first conductivity type is p-type, and the second conductivity type is n-type.

58. The photosensor according to claim 57, wherein said first doped region is doped with dopants selected from the group consisting of arsenic, antimony and phosphorous.

59. The photosensor according to claim 58, wherein said first doped region is doped with phosphorous.

60. The photosensor according to claim 47, further comprising a second doped region of a second conductivity formed in said doped layer adjacent a portion of said charge collection region opposite said first doped region.

61. The photosensor according to claim 60, further comprising a transfer transistor for transferring charge accumulated in said second doped region to a third doped region of said second conductivity type formed in said doped layer of said first conductivity type, wherein the gate of said transfer transistor is formed adjacent said second doped region.

62. The photosensor according to claim 61, wherein the first conductivity type is p-type, and the second conductivity type is n-type.

63. The photosensor according to claim 62, wherein said first, second and third doped regions are doped with dopants selected from the group consisting of arsenic, antimony and phosphorous.

64. The photosensor according to claim 63, wherein said first, second and third doped regions are doped with phosphorous.

65. The photosensor according to claim 61, further comprising a source follower transistor for outputting charge accumulated in said third doped region which has been transferred to said third doped region, wherein the gate of said source follower transistor is formed adjacent said third doped region.

66. The photosensor according to claim 47, wherein said trench storage capacitor has a depth of from about 200 to about 500 nm.

67. The photosensor according to claim 47, wherein said photosensor is used in a CMOS imager.