Skutterudite thermoelectric material thermoelectric couple and method of producing the same

• US 6,207,886 B1
• Filed: 06/30/1999
• Issued: 03/27/2001
• Est. Priority Date: 06/30/1998
• Status: Expired due to Term

• Current Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Kusakabe, Hiroki, Takigawa, Masuo
• Primary Examiner(s): Gorgos, Kathryn
• Assistant Examiner(s): Parsons, Thomas H
• Application Number:
  US09/343,680
• Time in Patent Office: 636 Days
• Field of Search: 136/236.1, 136/240, 136/201, 136/203, 136/205
• US Class Current: 136/201
• CPC Class Codes: H10N 10/853 comprising arsenic, antimony or bismuth H10N10/852 takes precedence

Abstract

The present invention relates to a skutterudite thermoelectric material for directly converting heat generated by the Seebeck effect into electricity, and provides a method of producing a Co—Sb-based filled-skutterudite sintered material having a lower thermal conductivity and thereby having a higher figure of merit. The crystal grains of a Sb-containing skutterudite compound and a metal oxide dispersed in the crystal grain boundaries are sintered to obtain the skutterudite thermoelectric sintered material. The metal oxide prevents growth of grains in the process of sintering, whereby the skutterudite compound is finely pulverized to have an average crystal grain size of 20 μm or less. As a result, the areas at the boundaries of the fine crystal grains are increased, phonon scattering is enhanced, the thermal conductivity is decreased, and the figure of merit is increased. The metal oxide is an oxide of a rare earth metal. The skutterudite compound includes a filled-skutterudite compound having a composition of Ln_yFe_xCo_4−xSb₁₂ (Ln: a rare earth metal, 0<x≦4, 0<y≦1).

Claims

1. A thermoelectric material using a skutterudite thermoelectric material being a sintered material which comprises the crystal grains of a Sb-containing skutterudite compound and a metal oxide dispersed between the grain boundaries thereof, wherein the crystals of said skutterudite compound are formed of a CoSb₃-based compound mainly composed of Co and Sb, and the crystals of the CoSb₃-based compound include a transition metal other than Co-group metals.

2. A thermoelectric material according to claim 1, wherein the sintered material has an average crystal grain size of 20 μ

m or less.

3. A thermoelectric material according to claim 2, wherein said metal oxide is an oxide of a rare earth metal.

4. A thermoelectric material according to claim 1, wherein said transitional metal is Cr, Mn, Fe or Ru, or Ni, Pa, Pt or Cu.

5. A thermoelectric material according to claim 1, being a sintered material obtained by sintering a compact comprising the powder composed of Co and Sb or the powder of said CoSb₃-based compound and said transition metal dispersed in said powder.

14. A thermoelectric couple comprising a p-type thermoelectric material and an n-type thermoelectric material, each formed of a Sb-containing skutterudite thermoelectric material, integrally joined to each other to form a p-n junction surface, wherein said p-type thermoelectric material is said thermoelectric material according to one of claims 8, 2 or 3, and said n-type thermoelectric material is a Sb-containing skutterudite thermoelectric material, part of Co is substituted with Ni, Pd or Pt.

15. A thermoelectric couple according to claim 14, wherein said n-type CoSb₃ thermoelectric material is an n-type filled-skutterudite thermoelectric material having a composition ratio of Ln_yFe_xM₄₋

xSb₁₂ (Ln;

a rare earth metal, 0≦

x≦

4, 0≦

y≦

1, M;

Ni, Pd or Pt), and has a junction established by sintering.

6. A filled-skutterudite thermoelectric material having a composition ratio of Ln_yFe_xM₄₋

xSb₁₂ wherein Ln is a rare earth metal, 1≦

x≦

4, 0≦

y≦

1, wherein M is Ni, Pd or Pt.

7. A thermoelectric material according to claim 6, wherein said composition satisfies the relationships of 3≦

x≦

4 and 0.8≦

y≦

1.

8. A method of producing a skutterudite thermoelectric material comprising crystals of a Sb-containing skutterudite compound, wherein the thermoelectric material is sintered from a mixed powder comprising said skutterudite compound or the ingredients thereof and a metal oxide, to disperse the metal oxide in the crystal grain boundaries thereof, wherein said Sb-containing skutterudite compound is a filled-skutterudite compound having a composition of Ln_yFe_xCo₄₋

xSb₁₂ wherein Ln_y is a rare earth metal, 0≦

x≦

4, 9<

y≦

1), and said mixed powder is obtained by carrying out precipitation from an aqueous solution including metals to disperse a precipitate including said metals to the powder of said skutterudite compound, and by heating and decomposing said precipitate to disperse a metal oxide to the powder of said compound.

9. A method of producing a skutterudite thermoelectric material comprising crystals of a Sb-containing skutterudite compound, wherein the thermoelectric material is sintered from a mixed powder comprising said skutterudite compound or the ingredients thereof and a metal oxide, to disperse the metal oxide in the crystal grain boundaries thereof, wherein said Sb-containing skutterudite compound is a filled-skutterudite compound having a composition of Ln_yFe_xCo₄₋

xSb₁₂ wherein Ln_y is a rare earth metal, 0<

x≦

4, 0<

y≦

1), and the crystals of said skutterudite compound are formed of a CoSb₃-based compound mainly composed of Co and Sb, said mixed powder comprises the crystals of said skutterudite compound and a transition metal other than a Co-group metal, and said mixed powder is sintered.

10. A method of producing a thermoelectric material according to claim 9, wherein said mixed powder comprises a transition metal electroless-plated on the powder of said CoSb₃-based compound.

11. A method of producing a thermoelectric material according to claim 9, wherein said mixed powder comprises a transition metal mixed on the surface of the mixed powder of Co and Sb or the surface of the powder of said CoSb₃-based compound by mechanical ironing.

12. A method of producing a thermoelectric material according to claim 9, wherein said mixed powder is obtained by dispersing the powders of Co and Sb or the powder of said CoSb₃-based compound in an aqueous solution in which a transition metal is dissolved, and by evaporating said aqueous solution to dryness and then by carrying out hydrogen reduction.

13. A method of producing a thermoelectric material according to one of claim 12, wherein said transitional metal is Mn, Cr, Fe or Ru, or Ni, Pd, Pt or Cu.

16. A method of producing a thermoelectric couple having a p-n junction by sintering, comprising joining a formed layer of a mixed raw material powder of a p-type filled Sb-containing skutterudite thermoelectric material with a formed layer of a mixed raw material powder of an n-type filled Sb-containing skutterudite thermoelectric material under pressure application, and integrally sintering said layers, wherein said raw material mixed powder is the mixed powder of a skutterudite compound or the ingredients thereof and a metal oxide, comprising the crystals of said Sb-containing skutterudite compound and a metal oxide dispersed in the crystal grain boundaries thereof, and said mixed powder is obtained by carrying out precipitation from an aqueous solution including metals to disperse a precipitate including said metals to the powder of said skutterudite compound, and by heating and decomposing said precipitate to disperse a metal oxide to the powder of said compound.