Process for thin film formation by sputtering

• US 6,217,719 B1
• Filed: 05/20/1999
• Issued: 04/17/2001
• Est. Priority Date: 05/22/1998
• Status: Expired due to Term

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Suzuki, Yasuyuki, Otani, Minoru, Ando, Kenji, Kanazawa, Hidehiro, Biro, Ryuji
• Primary Examiner(s): DIAMOND, ALAN D
• Application Number:
  US09/315,016
• Time in Patent Office: 698 Days
• Field of Search: 204/192.12, 204/192.13, 204/192.15, 204/192.16, 204/192.22, 204/298.07, 204/298.13, 204/298.12, 428/688, 428/696, 428/697, 428/698, 428/699, 428/702, 428/934, 428/938
• US Class Current: 204/192.12
• CPC Class Codes: C23C 14/0057 using reactive gases other than O2, H2O, N2, NH3 or CH4
• CPC Class Codes: C23C 14/0084 Producing gradient compositions
• CPC Class Codes: C23C 14/352 using more than one target C23C14/56 takes precedence

Abstract

A process is provided for forming a thin film having refractive index thereof varying continuously or stepwise in a thickness direction. The process comprises sputtering in a vacuum chamber by introducing, during film formation, at least two kinds of gases selected from a nitrogen-containing gas, an oxygen-containing gas, and a fluorine-containing gas with the flow rate ratio of the gases varied continuously or stepwise. This process enables variation of the refractive index in the thickness direction, simply without difficulty.

Claims

1. A process for forming a thin film having refractive index thereof varying continuously or stepwise in a thickness direction, comprising sputtering by introducing, during film formation, a nitrogen-containing gas, an oxygen-containing gas, and a fluorine-containing gas with a flow rate ratio of the fluorine-containing gas to the nitrogen-containing gas and/or the oxygen-containing gas varied continuously or stepwise.

4. The process for forming a thin film according to claim 1, 2 or 3, wherein a metal target employed for the sputtering is composed mainly of at least one material selected from the group consisting of Bi, Hf, Pb, Zr, Y, and Mg.

5. The process for forming a thin film according to claim 1, 2 or 3, wherein a metal target employed for the sputtering is composed mainly of Al.

6. The process for forming a thin film according to claim 1 or 2, wherein the nitrogen-containing gas contains at least one selected from the group consisting of NF₃, NH₃, N₂O, NO, NO₂, and N₂.

7. The process for forming a thin film according to claim 1, 2, or 3, wherein the fluorine-containing gas contains at least one selected from the group consisting of CF₄, NF₃, HF, SF₆, BF₃, CHClF₂, SiF₄, and F₂.

8. The process for forming a thin film according to claim 1 or 3, wherein the oxygen-containing gas contains at least one selected from the group consisting of O₂, O₃, N₂O, NO, NO₂, CO₂, CO, SO₂, and H₂O.

9. A process for forming a thin film as set forth in claim 1, wherein the film is selected from nitride films, oxide films, fluoride films, and mixtures thereof.

2. A process for forming a thin film having refractive index thereof varying continuously or stepwise in a thickness direction, comprising sputtering by introducing, during film formation, at least a nitrogen-containing gas and a fluorine-containing gas with a flow rate ratio of the nitrogen-containing gas to the fluorine-containing gas varied continuously or stepwise.

10. A process for forming a thin film as set forth in claim 2, wherein the film is selected from nitride films, fluoride films, and mixtures thereof.

12. The process for forming a thin film according to claim 9, 10 or 11, wherein the film has a refractive index varying continuously or stepwise in a thickness direction in the range from 1.3 to 2.2.

14. The process for forming a thin film according to claim 9, 10 or 11, wherein the fluoride film is mainly composed of aluminum fluoride.

3. A process for forming a thin film having refractive index thereof varying continuously or stepwise in a thickness direction, comprising sputtering by introducing, during film formation, at least an oxygen-containing gas and a fluorine-containing gas with a flow rate ratio of the oxygen-containing gas to the fluorine-containing gas varied continuously or stepwise.

11. A process for forming a thin film as set forth in claim 3, wherein the film is selected from oxide films, fluoride films, and mixtures thereof.

13. The process for forming a thin film according to claim 9 or 11, wherein the nitride film is mainly composed of aluminum nitride.

15. The process for forming a thin film according to claim 9 or 11, wherein the oxide film is mainly composed of aluminum oxide.

16. A process for forming a thin film by sputtering, comprising forming a first thin film having a first refractive index and thereafter forming a second thin film having a second refractive index different from the first refractive index, wherein the sputtering is conducted by introducing, during film formation, at least two gases, one of which is a fluorine-containing gas and the other gas or gases are a nitrogen-containing gas and/or an oxygen-containing gas, with a flow rate ratio of the fluorine-containing gas to the nitrogen-containing gas and/or the oxygen-containing gas varied continuously or stepwise to obtain a refractive index varying continuously or stepwise in a thickness direction in the neighbourhood of the boundary between the first thin film and the second thin film.

17. The process for forming a thin film according to claim 16, wherein the first thin film is formed by introducing the oxygen-containing gas;

subsequently a ratio of the fluorine-containing gas to the oxygen-containing gas is increased gradually; and

the second thin film is formed by introducing the fluorine-containing gas.