Method of making a semiconductor image sensor

DC
  • US 6,221,686 B1
  • Filed: 01/28/2000
  • Issued: 04/24/2001
  • Est. Priority Date: 11/14/1997
  • Status: Expired due to Term
First Claim
Patent Images

1. A method of forming an image sensor comprising:

  • providing a semiconductor substrate of a first conductivity type;

    forming an enhancement layer on the substrate, the enhancement layer having the first conductivity type and a first doping concentration;

    forming a first well on a first portion of the enhancement layer, the first well having the first conductivity type and a second doping concentration that is greater than the first doping concentration wherein the first well has a first depth into the enhancement layer;

    forming a conducting region of a second conductivity type in a second portion of the enhancement layer wherein a first portion of the conducting region forms a portion of a MOS transistor; and

    forming a pinned layer of the first conductivity type in the second region of the enhancement layer by forming a first portion of the pinned layer within the conducting region and a second portion of the pinned layer extending laterally from the conducting region in a direction away from the MOS transistor.

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