Ar-based si-rich oxynitride film for dual damascene and/or contact etch stop layer

  • US 6,235,653 B1
  • Filed: 06/04/1999
  • Issued: 05/22/2001
  • Est. Priority Date: 06/04/1999
  • Status: Expired due to Term
First Claim
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1. A method of fabricating an integrated circuit device comprising:

  • providing a semiconductor substrate;

    depositing by plasma-enhanced chemical vapor deposition, using Argon as a radio frequency stabilizer and a carrier gas, a silicon-rich oxynitride etch stop layer overlying said semiconductor substrate;

    depositing an oxide layer overlying said silicon-rich oxynitride etch stop layer;

    etching an opening through said oxide layer stopping at said silicon-rich oxynitride etch stop layer;

    thereafter removing said silicon-rich oxynitride etch stop layer within said opening;

    filling said opening with a conducting layer; and

    completing said fabrication of said integrated circuit device.

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