Ar-based si-rich oxynitride film for dual damascene and/or contact etch stop layer
First Claim
1. A method of fabricating an integrated circuit device comprising:
- providing a semiconductor substrate;
depositing by plasma-enhanced chemical vapor deposition, using Argon as a radio frequency stabilizer and a carrier gas, a silicon-rich oxynitride etch stop layer overlying said semiconductor substrate;
depositing an oxide layer overlying said silicon-rich oxynitride etch stop layer;
etching an opening through said oxide layer stopping at said silicon-rich oxynitride etch stop layer;
thereafter removing said silicon-rich oxynitride etch stop layer within said opening;
filling said opening with a conducting layer; and
completing said fabrication of said integrated circuit device.
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Abstract
A new method of forming a plasma-enhanced silicon-rich oxynitride layer having improved uniformity across the wafer in terms of layer thickness, refractivity, and reflectivity by using argon as the inert carrier gas is described. A semiconductor substrate is provided which may include semiconductor device structures. An Argon-based silicon-rich oxynitride etch stop layer is deposited overlying the semiconductor substrate. An oxide layer is deposited overlying the Argon-based silicon-rich oxynitride etch stop layer. An opening is etched through the oxide layer stopping at the Argon-based silicon-rich oxynitride etch stop layer. Thereafter, the Argon-based silicon-rich oxynitride etch stop layer within the opening is removed. The opening is filled with a conducting layer. This Argon-based silicon-rich oxynitride layer has improved uniformity across the wafer in terms of layer thickness, refractivity, and reflectivity as compared with a helium-based silicon-rich oxynitride layer.
29 Citations
20 Claims
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1. A method of fabricating an integrated circuit device comprising:
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providing a semiconductor substrate;
depositing by plasma-enhanced chemical vapor deposition, using Argon as a radio frequency stabilizer and a carrier gas, a silicon-rich oxynitride etch stop layer overlying said semiconductor substrate;
depositing an oxide layer overlying said silicon-rich oxynitride etch stop layer;
etching an opening through said oxide layer stopping at said silicon-rich oxynitride etch stop layer;
thereafter removing said silicon-rich oxynitride etch stop layer within said opening;
filling said opening with a conducting layer; and
completing said fabrication of said integrated circuit device.- View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of fabricating an intergrated circuit device comprising:
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providing semiconductor device structures in and on a semiconductor substrate covered by an insulating layer;
depositing by plasma-enhanced chemical vapor deposition a first silicon-rich oxynitride etch stop layer overlying said insulating layer using Argon as a radio frequency stabilizer and a carrier gas;
depositing a first oxide layer overlaying said first silicon-rich oxynitride etch stop layer;
depositing by plasma-enhanced chemical vapor desposition a second silicon-rich oxynitride etch stop layer overlying said first oxide layer using Argon as a radio frequency stabilizer and a carrier gas;
despositing a second oxide layer overlying said second silicon-rich oxynide etch stop layer;
etching a dual damascene opening through said second and first oxide layers with etch stops at said second and first silicon-rich oxynitride etch stop layers and removing said second and first silicon-rich oxynitride etch stop layers within said dual damascene opening;
filling said dual damascene opening with a conducting layer; and
completing said fabricating of said intergrated circuit device. - View Dependent Claims (10, 11, 12, 13, 14)
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15. A method of fabricating an integrated circuit device comprising:
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providing semiconductor device structures in and on a semiconductor substrate;
depositing by plasma-enhanced chemical vapor deposition a silicon-rich oxynitride etch stop layer overlying said semiconductor device structures using Argon as a radio frequency stabilizer and a carrier gas;
depositing an oxide layer overlying said silicon-rich oxynitride etch stop layer;
etching an opening through said oxide layer stopping at said silicon-rich oxynitride etch stop layer;
thereafter removing said silicon-rich oxynitride etch stop layer within said opening to expose one of said semiconductor device structures;
filling said opening with a conducting layer; and
completing said fabrication of said integrated circuit device. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification