Transcutaneous energy transmission system with full wave Class E rectifier

• US 6,240,318 B1
• Filed: 10/27/1999
• Issued: 05/29/2001
• Est. Priority Date: 10/27/1998
• Status: Expired due to Fees

• Current Assignee: Richard P. Phillips
• Original Assignee: Richard P. Phillips
• Inventors: Phillips, Richard P.
• Primary Examiner(s): Getzow, Scott M.
• Application Number:
  US09/427,414
• Time in Patent Office: 580 Days
• Field of Search: 607/61, 607/33, 607/32, 607/30, 607/27
• US Class Current: 607/61
• CPC Class Codes: A61N 1/3787 from an external energy source

Abstract

A transcutaneous energy transmission system (TETS) including a Class E full wave low dv/dt rectifier in the implantable receiver circuit. The TETS provides power for any kind of implantable device requiring a source of DC power for operation. The Class E full wave low dv/dt rectifier provides efficient conversion of radio frequency power to direct current power. Another embodiment of a TETS includes a Class E full wave low dv/dt rectifier with circuitry for synchronous rectification. A receiver circuit including a Class E full wave low dv/dt rectifier configured for use with a transmitter circuit is also disclosed.

Claims

1. A transcutaneous energy transmission system (TETS) comprising:

a transmitter circuit for generating a radio frequency (RF) signal; and

an implantable receiver circuit for inductively coupling with said transmitter circuit, wherein said receiver circuit includes a Class E full wave low dv/dt rectifier.

2. The TETS of claim 1, wherein said transmitter circuit comprises:

external TETS circuitry for receiving a DC power input and outputting said RF signal; and

an external coil electrically coupled to said external TETS circuitry for receiving said RF signal and generating an electromagnetic field responsive thereto.

3. The TETS of claim 2, wherein said external TETS circuitry comprises a Class D amplifier circuit.

4. The TETS of claim 2, wherein said external coil comprises Litz wire.

5. The TETS of claim 1, wherein said implantable receiver circuit comprises:

an internal coil for receiving said RF signal;

a capacitor in series with said internal coil selected to provide a resonant condition in said implantable receiver circuit; and

a Class E full wave low dv/dt rectifier coupled to said internal coil and said capacitor for rectifying said RF signal.

6. The TETS of claim 1, wherein said implantable receiver circuit includes a rechargeable battery.

7. The TETS of claim 1, further comprising a DC power source for generating said DC power input to said external TETS circuitry.

8. The TETS of claim 7, wherein said DC power source is an AC power source coupled to an AC to DC converter.

9. The TETS of claim 7, wherein said DC power source is a vehicle electrical system.

10. The TETS of claim 7, wherein said DC power source is a battery.

11. The TETS of claim 10, wherein said battery is selected from the group consisting of lithium ion, nickel metal hydride, nickel cadmium and alkaline.

12. The TETS of claim 10, wherein said battery is rechargeable.

13. The TETS of claim 1, further comprising an implantable device electrically coupled to and powered by said implantable receiver circuit.

14. The TETS of claim 13, wherein said implantable device is a mechanical circulatory support system.

15. The TETS of claim 13, wherein said implantable device is a left ventricular device.

16. An implantable receiver circuit for inductively coupling to an external transmitter circuit, said implantable receiver circuit configured for powering an implantable device and comprising:

an inductive coil for generating an RF signal responsive to an electromagnetic field generated by the external transmitter circuit;

a capacitor in series with said inductive coil; and

a Class E full wave low dv/dt rectifier coupled to said inductive coil and said matching capacitor for rectifying said RF signal.

17. The implantable receiver circuit of claim 16, wherein the capacitor is selected to provide resonant operation of said implantable receiver circuit.

18. The implantable receiver circuit of claim 16, wherein said Class E full wave low dv/dt rectifier with input between nodes A and B and output between nodes E and F comprises:

a first parallel capacitor coupled between nodes B and F;

a second parallel capacitor coupled between nodes F and A;

a first diode coupled between nodes B and F;

a second diode coupled between nodes F and A;

a first inductor coupled between nodes B and E;

a second inductor coupled between nodes A and E; and

a filter capacitor coupled across the output.

19. The implantable receiver circuit of claim 18, further comprising circuitry for synchronous rectification.

20. The implantable receiver circuit of claim 19, wherein said circuitry for synchronous rectification comprises:

gate control circuitry for sensing current in said first diode and said second diode;

a first transistor having a gate coupled to said gate control circuitry and having drain and source coupled in parallel with leads of said first diode;

a second transistor having a gate coupled to said gate control circuitry and having drain and source coupled in parallel with leads of said second diode;

wherein said gate control circuitry is adapted to turn on said first transistor when the current in said first diode is above a threshold level; and

wherein said gate control circuitry is adapted to turn on said second transistor when the current in said second diode is above said threshold level.