Symmetrical program and erase scheme to improve erase time degradation in NAND devices

  • US 6,246,610 B1
  • Filed: 02/22/2000
  • Issued: 06/12/2001
  • Est. Priority Date: 02/22/2000
  • Status: Expired due to Term
First Claim
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1. A method for programming and erasing a nonvolatile memory device comprising:

  • applying a set of program voltages;

    applying an erase voltage, wherein the average voltage of the set of program voltages and the erase voltage are within 1.0 V of each other.

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