Method for depositing high density plasma chemical vapor deposition oxide with improved topography

  • US 6,251,795 B1
  • Filed: 04/08/1999
  • Issued: 06/26/2001
  • Est. Priority Date: 04/08/1999
  • Status: Active Grant
First Claim
Patent Images

1. A method of forming an HDPCVD oxide layer over a substrate having uneven topography in a process chamber, the method comprising:

  • depositing HDPCVD oxide over said uneven topography; and

    then after a predetermined thickness of said HDPCVD oxide has been deposited, wherein said predetermined thickness is greater than the desired final thickness of said HDPCVD oxide, performing a sputter only step in said process chamber, thereby planarizing said HDPCVD oxide; and

    depositing a PECVD cap oxide layer over said HDPCVD oxide layer.

View all claims

    Thank you for your feedback