Self-aligned contacts for salicided MOS devices

  • US 6,258,714 B1
  • Filed: 04/01/1999
  • Issued: 07/10/2001
  • Est. Priority Date: 04/01/1999
  • Status: Expired due to Term
First Claim
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1. A method of making a self-aligned contact in a MOS device, comprising:

  • forming a polysilicon gate having sidewall spacers on a semiconductor substrate having diffusion regions, said polysilicon gate separated from said substrate by a gate oxide;

    forming a metal silicide on said polysilicon gate and said diffusion regions;

    forming a self-aligned contact etch stop mask over said silicided polysilicon gate and at least a portion of said sidewall spacers, wherein said mask has at least one opening for at least one contact hole over at least a portion of the diffusion regions;

    forming an interlayer dielectric layer over said masked gate and silicided diffusion regions;

    conducting a self-aligned contact etch of said interlayer dielectric; and

    depositing a contact interconnect material in a contact hole created by said self-aligned contact etch.

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