Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensity

  • US 6,265,726 B1
  • Filed: 08/24/1999
  • Issued: 07/24/2001
  • Est. Priority Date: 03/22/1994
  • Status: Expired due to Term
First Claim
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1. A light-emitting semiconductor device comprising:

  • an N+-layer of N-type conduction of group III nitride compound semiconductor;

    an N-layer of N-type conduction of group III nitride compound semiconductor satisfying the formula Alx2Gay2In1−

    x2−

    y2
    N, where 0≦

    x2≦

    1, 0≦

    y2≦

    1, and 0≦

    x2+y2

    1 with a low electron concentration formed on said N+-layer, said N-layer having a valence band;

    an emission layer of group III nitride compound semiconductor satisfying the formula Alx3Gay3In1−

    x3−

    y3
    N, where 0≦

    x3≦

    1, 0≦

    y3≦

    1, and 0≦

    x3+y3≦

    1;

    a P-layer of P-type conduction of group III nitride compound semiconductor satisfying the formula Alx4Gay4In1−

    x4−

    y4
    N, where 0≦

    x4≦

    1, 0≦

    y4≦

    1, and 0≦

    x4+y4≦

    1, said P-layer having a conduction band;

    a P-electrode emission layer, and an N-electrode;

    wherein a band width of said N-layer is smaller than a band width of said P-layer and an electrical potential barrier of the valence band of said N-layer is lower than an electrical potential barrier of the conduction band of said P-layer.

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