Ion implantation with charge neutralization

• US 6,271,529 B1
• Filed: 05/22/1998
• Issued: 08/07/2001
• Est. Priority Date: 12/01/1997
• Status: Expired due to Fees

• Current Assignee: Ebara Corporation
• Original Assignee: Ebara Corporation
• Inventors: Farley, Marvin, Nasser-Ghodsi, Mehran, Dudnikov, Vadim G.
• Primary Examiner(s): Anderson, Bruce C.
• Application Number:
  US09/083,707
• Time in Patent Office: 1,173 Days
• Field of Search: 250/251, 250/452.21, 250/423.R, 315/111.81
• US Class Current: 250/492.21
• CPC Class Codes: H01J 2237/0041 Neutralising arrangements
• CPC Class Codes: H01J 2237/0042 Deflection of neutralising particles
• CPC Class Codes: H01J 2237/0044 of objects being observed or treated
• CPC Class Codes: H01J 2237/0045 using secondary electrons
• CPC Class Codes: H01J 37/026 Means for avoiding or neutralising unwanted electrical charges on tube components
• CPC Class Codes: H01J 37/063 Geometrical arrangement of electrodes for beam-forming
• CPC Class Codes: H01J 37/3171 for ion implantation plasma immersion ion implantation H01J37/32412
• CPC Class Codes: H05H 1/54 Plasma accelerators
• CPC Class Codes: H05H 3/02 Molecular or atomic beam generation charge exchange devices G21K1/14; polarising devices G21K1/16; using resonance or molecular beams for analysing or investigating materials G01N24/002; atomic clock G04F5/14; beam masers H01S1/06

Abstract

An ion implanter is provided for implanting ions in a workpiece. The ion implanter includes an apparatus for generating an ion beam and directing it toward a surface of a work piece and a plasma generator for generating plasma to neutralize the ion beam and the work piece surface. The plasma generator has a plasma generator chamber defined by walls, a relatively narrow outlet aperture for plasma produced in the chamber to leave the chamber to neutralize the beam and work piece surface, cathodes, and anodes spaced from the cathodes and from the walls of the chamber. The plasma generator also has magnets arranged within the plasma generator chamber, adjacent the chamber walls to generate a magnetic field to deflect primary electrons emitted from the cathode from directly reaching the anode. The plasma generator also features a conductive shield, positioned within the chamber between the anode and the magnets, the shield having an electric potential selected to deflect electrons, the magnetic field and the conductive shield effective during operation to cause electrons from the cathode to trace extended paths to ionize gas within the chamber to generate plasma before reaching the anode. A drift tube defined by walls through which the ion beam passes before reaching the workpiece is opened into by the aperture opens into the tube. A series of parallel, linear magnets are positioned perpendicular to the general path of the ion beam. The adjacent poles of adjacent magnets are of opposite polarity.

Claims

1. An ion implanter for implanting ions in a workpiece, comprising

apparatus for generating an ion beam and directing it toward a surface of a work piece, and

a plasma generator for generating plasma to neutralize the ion beam and the work piece surface, the plasma generator comprising

a plasma generator chamber defined by walls,

a relatively narrow outlet aperture for plasma produced in the chamber to leave the chamber to neutralize the beam and work piece surface,

at least one cathode,

at least one anode spaced from the cathode and from the walls of the chamber,

magnets arranged within the plasma generator chamber, adjacent the chamber walls to generate a magnetic field to deflect primary electrons emitted from the cathode from directly reaching the anode, and

a conductive shield, positioned within the chamber between the anode and the magnets, the shield having an electric potential selected to deflect electrons, the magnetic field and the conductive shield effective during operation to cause electrons from the cathode to trace extended paths to ionize gas within the chamber to generate plasma before reaching the anode.

2. The ion implanter of claim 1, for use with a scanned ion beam, the chamber and its outlet aperture being elongated and arranged across a scanned path of the beam.

3. The ion implanter of claim 1 wherein the apparatus for generating and directing the ion beam includes a magnetic scanner.

4. The ion implanter in claim 3, wherein the ion beam is a high energy beam.

5. The ion implanter of claim 1, wherein the cathode is a spiral coil.

6. The ion implanter of claim 1, wherein the anode is in a generally surrounding relationship with the cathode.

7. The ion implanter of claim 6, wherein the ion implanter further comprises a second anode and cathode.

8. The ion implanter of claim 7, wherein the magnets of the plasma generator generate a magnetic cusp field that generally contains the plasma along an axis connecting the cathodes.

9. The ion implanter of claim 1, wherein the chamber comprises a wall onto which the cathode is mounted, the wall having substantially the same potential as the cathode so as to deflect electrons from the wall.

10. The ion implanter of claim 1 further comprising other magnets surrounding the relatively narrow outlet aperture, the other magnets creating a magnetic field for preventing primary electrons from leaving the chamber.

11. The ion implanter of claim 1, wherein the chamber has a generally trapezoidal cross-section, the relatively narrow outlet aperture being located at a narrow end of the trapezoid.

12. The ion implanter of claim 11, wherein the relatively narrow outlet aperture is a discontinuous slit.

13. The ion implanter of claim 11, wherein two magnets are located at either side of the relatively narrow outlet aperture, the two magnets creating a magnetic field for preventing primary electrons from leaving the chamber.

14. The ion implanter of claim 1, wherein the chamber comprises a wall opposing the cathode, and the magnets comprise a series of linear magnets disposed in parallel and inside of the chamber walls, a side facing inside the chamber and an opposing side facing outside having opposite polarity, the adjacent magnets being of opposite polarity, the magnets being sized and arranged in a pattern along the tube to create a magnetic field that generally contains the plasma along an axis between the cathode and the opposing wall.

15. The ion implanter of claim 14, wherein a second anode and cathode is positioned on the opposing wall.

16. The ion implanter of claim 1, wherein the chamber walls are cooled.

17. The ion implanter of claim 16, wherein the chamber walls are water-cooled.

18. The ion implanter of claim 1 further comprising

a drift tube defined by walls through which the ion beam passes before reaching the workpiece, wherein the aperture opens into the tube, and

a series of parallel, linear magnets positioned perpendicular to the general path of the ion beam, the magnets having a side facing the beam and an opposing side facing away from the beam, the two sides of the magnets having opposite polarity, the adjacent poles of adjacent magnets being of opposite polarity, the magnets sized and arranged in a pattern along the tube to create a magnetic field that prevents the plasma from reaching the walls of the drift tube and to enable any deflection of the ion beam produced by one magnet pole to be substantially neutralized by the successive magnet pole of the next adjacent downstream magnets.

19. The ion implanter of claim 18, wherein the drift tube has generally a rectangular cross-section.

20. The ion implanter of claim 18, wherein the drift tube allows for a beam scanning path in order of 40 cm.

21. The ion implanter of claim 1, wherein the conductive shield is constructed from graphite.

22. The ion implanter of claim 1, wherein the plasma generator is tilted relative to a general path of the beam.

23. The ion implanter of claim 1, wherein the plasma generator is characterized by a discharge axis defining an axis of discharge of plasma from the plasma generator and the discharge axis is perpendicular to a general path of a beam.

24. The ion implanter of claim 1, wherein the plasma generator is characterized by a discharge axis defining an axis of discharge of plasma from the plasma generator and the discharge axis is at an angle to a general path of a beam.

25. The ion implanter of claim 24, wherein the discharge axis is tilted toward the wafer.

26. The ion implanter of claim 1, for use with a scanned ion beam, wherein the chamber and its outlet aperture are arranged perpendicular to a scanned path of the beam.

27. The ion implanter of claim 26, further comprising

a drift tube defined by walls through which the ion beam passes before reaching the workpiece, wherein the aperture opens into the tube, wherein the drift tube has generally a rectangular cross-section and the chamber and its outlet aperture are arranged along a short side of the drift tube.

28. The ion implanter of claim 27 further comprising a series of parallel, linear magnets positioned perpendicular to the general path of the ion beam, the magnets having a side facing the beam and an opposing side facing away from the beam, the two sides of the magnets having opposite polarity, the adjacent poles of adjacent magnets being of opposite polarity, the magnets sized and arranged in a pattern along the tube to create a magnetic field that prevents the plasma from reaching the walls of the drift tube and to enable any deflection of the ion beam produced by one magnet pole to be substantially neutralized by the successive magnet pole of the next adjacent downstream magnets.

29. A plasma generator for generating plasma to neutralize an ion beam and a work piece surface, the plasma generator comprising

a plasma generator chamber defined by walls,

a relatively narrow outlet aperture for plasma produced in the chamber to leave the chamber to neutralize the beam and work piece surface,

at least one cathode,

at least one anode spaced from the cathode and from the walls of the chamber,

magnets arranged within the walls to generate a magnetic field that deflects primary electrons emitted from the cathode from directly reaching the anode, and

a conductive shield, positioned within the chamber between the anode and the magnets, the shield having an electric potential selected to deflect electrons, the magnetic field and the conductive shield effective during operation to cause electrons from the cathode to trace extended paths to ionize gas within the chamber to generate plasma before reaching the anode.

30. An ion implanter for implanting ions in a workpiece using a magnetically scanned ion beam, comprising

apparatus for generating an ion beam and directing it toward a surface of a work piece,

a plurality of magnets to focus and scan the ion beam in a first direction,

a workpiece holder to hold the workpiece and to move the workpiece in a second direction substantially perpendicular to the first direction,

a plasma generator for generating plasma to neutralize the ion beam and the work piece surface, the plasma generator comprising

a chamber defined by walls,

a relatively narrow outlet aperture for plasma produced in the chamber to leave the chamber to neutralize the beam and work piece surface,

at least one cathode,

at least one anode spaced from the cathode and from the walls of the chamber,

magnets arranged within the plasma generator chamber, adjacent to the chamber walls to generate a magnetic field to deflect primary electrons emitted from the cathode from directly reaching the anode, and

a conductive shield, positioned within the chamber between the anode and the magnets, the shield having an electric potential selected to deflect electrons, the magnetic field and the conductive shield effective during operation to cause electrons from the cathode to trace extended paths to ionize gas within the chamber to generate plasma before reaching the anode,

a drift tube defined by walls through which the ion beam passes before reaching the workpiece, wherein the aperture opens into the tube, and

a series of parallel, linear magnets positioned perpendicular to the general path of the ion beam, the magnets having a side facing the beam and an opposing side facing away from the beam, the two sides of the magnets having opposite polarity, the adjacent poles of adjacent magnets being of opposite polarity, the magnets sized and arranged in a pattern along the tube to create a magnetic field that prevents the plasma from reaching the walls of the drift tube and to enable any deflection of the ion beam produced by one magnet pole to be substantially neutralized by the successive magnet pole of the next adjacent downstream magnets.