Power semiconductor module with insulation shell support for plural separate substrates

• US 6,272,015 B1
• Filed: 08/02/2000
• Issued: 08/07/2001
• Est. Priority Date: 11/24/1997
• Status: Expired due to Term

• Current Assignee: Infineon Technologies Americas Corp. (Infineon Technologies AG)
• Original Assignee: International Rectifier Corporation (Infineon Technologies AG)
• Inventors: Mangtani, Vijay
• Primary Examiner(s): Picard, Leo P.
• Assistant Examiner(s): CHERVINSKY, BORIS LEO
• Application Number:
  US09/632,026
• Time in Patent Office: 370 Days
• Field of Search: 361/704, 361/707, 361/715, 361/717-719, 361/723, 361/736, 361/752, 361/761, 361/796, 174/52.2, 174/52.4, 174/52.3, 257/687, 257/706, 257/707, 257/713, 257/787, 257/796, 165/80.3, 165/185
• US Class Current: 361/707
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/4824 Connecting between the body and an opposite side of the item with respect to the body
• CPC Class Codes: H01L 2224/49111 the connectors connecting two common bonding areas, e.g. Litz or braid wires
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01057 Lanthanum [La]
• CPC Class Codes: H01L 2924/01068 Erbium [Er]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/10253 Silicon [Si]
• CPC Class Codes: H01L 2924/1301 Thyristor
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/19041 being a capacitor
• CPC Class Codes: H01L 2924/3025 Electromagnetic shielding
• CPC Class Codes: H05K 7/1432 specially adapted for power drive units or power converters
• CPC Class Codes: H05K 7/14322 wherein the control and power circuits of a power converter are arranged within the same casing

Abstract

A power semiconductor device module has a plurality of spaced thermally supported substrates mounted within coplanar openings in an insulation support shall and electrically insulated from one another by the body of the insulation support shell. Each of the substrates may be a separate metal heatsink or a separate IMS sheet. Each of the substrates may receive one or more semiconductor die. A printed circuit board containing control circuits for the die is mounted above the plane of the substrate and contains openings in registry with each substrate for wire bonding the control circuits to the die. The structure permits the reduction in area of any IMS substrate or permits the elimination of the IMS.

Claims

1. A power module comprising, in combination, a plurality of power semiconductor die each having a bottom surface and a top surface;

an insulation support shell;

a plurality of thermally conductive semiconductor die support means for receiving the bottom surfaces of respective ones of said power semiconductor die; and

a printed circuit board containing a control circuit thereon for controlling the operation of said plurality of power die;

said printed circuit board disposed in a plane and parallel to the plane of said die support means;

said printed circuit board having a plurality of spaced openings therein;

said insulation support shell having a plurality of coplanar openings therein which are each centered on a respective one of the openings in said printed circuit board;

said plurality of thermally conductive support means being disposed and fixed within respective ones of said openings in said insulation shell and being electrically insulated from one another by said insulation shell; and

wire bond means extending through said openings and connecting said control circuits to respective ones of said power semiconductor die.

2. The power module of claim 1, wherein said plurality of thermally conductive support means are each an electrically conductive heatsink;

and wherein at least one of said plurality of semiconductive die is affixed to the upper surface of respective ones of said heatsinks.

3. The power module of claim 1, wherein each said plurality of thermally conductive support means comprises an electrical insulation substrate having a conductive upper surface region;

at least one of said plurality of semiconductor die being affixed to said conductive upper surface of each of said substrates;

each of said substrates being adapted to receive an electrically conductive heatsink in thermal communication with their bottom surfaces.

4. The power module of claim 1, wherein each of said thermally conductive support means has a square upper surface.

5. The power module of claim 1, wherein each of said thermally conductive support means has an elongated rectangular surface.

6. The power module of claim 2, wherein each of said thermally conductive support means has a square upper surface.

7. The power module of claim 3, wherein each of said thermally conductive support means has a square upper surface.

8. The power module of claim 2, wherein each of said thermally conductive support means has an elongated rectangular surface.

9. The power module of claim 3, wherein each of said thermally conductive support means has an elongated rectangular surface.

10. The power module of claim 1, wherein each of said support means receives at least two spaced semiconductor die on the top surface thereof;

said at least two die on each of said support means being electrically connected at their bottom surfaces.

11. The power module of claim 2, wherein each of said support means receives at least two spaced semiconductor die on the top surface thereof;

said at least two die on each of said support surfaces being electrically connected at their bottom surfaces.

12. The power module of claim 3, wherein each of said support means receives at least two spaced semiconductor die on the top surface thereof;

said at least two die on each of said support surfaces being electrically connected at their bottom surfaces.

13. The power module of claim 5, wherein each of said support means receives at least two spaced semiconductor die on the top surface thereof;

said at least two die on each of said support surfaces being electrically connected at their bottom surfaces.