Recessed bonding of target for RF diode sputtering

• US 6,287,437 B1
• Filed: 05/05/2000
• Issued: 09/11/2001
• Est. Priority Date: 05/05/2000
• Status: Expired due to Fees

• Current Assignee: Alcatel SA (Nokia Corporation)
• Original Assignee: Alcatel SA (Nokia Corporation)
• Inventors: Feldman, Mark, Pandhumsoporn, Tamarak
• Primary Examiner(s): Nguyen, Nam
• Assistant Examiner(s): VerSteeg, Steven H
• Application Number:
  US09/564,582
• Time in Patent Office: 494 Days
• Field of Search: 204/192.12, 204/298.12, 204/298.13, 427/314, 427/398.1, 428/594
• US Class Current: 204/298.13
• CPC Class Codes: C23C 14/3407 Cathode assembly for sputtering apparatus, e.g. Target

Abstract

A recessed sputtering target assembly is provided with a bonding material disposed between a dielectric target and a backing plate. The bond line of the bonding material is recessed away from the edges of the target and backing plate, preferably by ¼ inch. The sputtering target assembly may be used during high RF power processes to achieve high deposition rates without arcing of the bonding material or contamination of the sputtering chamber.

Claims

1. A sputtering target assembly, comprising:

a dielectric target;

a metal coating layered on a face of said dielectric target;

a layer of bonding material disposed on the metal coating layer; and

a backing plate disposed on said dielectric target, so that said layer of bonding material is disposed between said metal coating layer and said backing plate, an outer peripheral edge of said layer of bonding material defining an outer bond line,

wherein said bond line of said layer of bonding material is recessed away from peripheral edges of said target and backing plate,

wherein said layer of bonding material contains indium, and

wherein said dielectric target is alumina, said backing plate includes copper and nickel, and said metal coating layer is aluminum.

2. The sputtering target assembly of claim 1, wherein said bond line of said layer of bonding material is recessed from the peripheral edges of the target and backing plate by about 0.25 inches.

3. A method of manufacturing a sputtering target assembly, comprising the steps of:

coating a face of a dielectric target with metal;

applying a bonding material to one face of a backing plate so that the bonding material has a bond line recessed from edges of the backing plate, wherein an outer peripheral edge of said bonding material defines the bond line;

adhering the target to the backing plate so that the bonding material is disposed between the metal coating and the backing plate and the bond line is recessed away from edges of the target and the edges of the backing plate; and

cooling the dielectric target and backing plate in a dry environment area,

wherein the backing plate is heated to at least 180°

C. before the step of applying the bonding material.

4. The method of manufacturing a sputtering target according to claim 3, wherein the bonding material is indium.

5. The method of manufacturing a sputtering target according to claim 3, wherein the step of applying the bonding material includes recessing the bond line from the edges of the dielectric target by about ¼

inches and forming the bonding layer to be about 0.0005 to 0.015 inches thick.

6. The method of manufacturing a sputtering target according to claim 3, wherein the coating step includes coating the metal layer to have a thickness of approximately 100 microns.

7. The method of manufacturing a sputtering target according to claim 3, wherein the metal layer is one of copper, nickel, aluminum, titanium and palladium.

8. A method of manufacturing a sputtering target assembly, comprising the steps of:

coating a face of a dielectric target with metal;

applying a bonding material to one face of a backing plate so that the bonding material has a bond line recessed from edges of the backing plate, wherein an outer peripheral edge of said bonding material defines the bond line;

adhering the target to the backing plate so that the bonding material is disposed between the metal coating and the backing plate and the bond line is recessed away from edges of the target and the edges of the backing plate; and

cooling the dielectric target and backing plate in a dry environment area,

wherein a guide is provided to prevent the bonding material from being applied to a peripheral edge of the backing plate, so that the bonding material is only applied to an interior portion of the backing plate face.

9. A method of manufacturing a sputtering target assembly, comprising the steps of:

coating a face of a dielectric target with metal;

applying a bonding material to one face of a backing plate so that the bonding material has a bond line recessed from edges of the backing plate, wherein an outer peripheral edge of said bonding material defines the bond line;

adhering the target to the backing plate so that the bonding material is disposed between the metal coating and the backing plate and the bond line is recessed away from edges of the target and the edges of the backing plate; and

cooling the dielectric target and backing plate in a dry environment area,

wherein a groove is provided on the backing plate face to prevent the bonding material from flowing on a peripheral portion of the backing plate, so that the bonding material is only applied to an interior portion of the backing plate face.