Information storage system including state-designating area on memory card and detecting presence or absence of state-designating member on state-designating area to inhibit or allow writing of information

• US 6,292,850 B1
• Filed: 08/12/1999
• Issued: 09/18/2001
• Est. Priority Date: 02/03/1995
• Status: Expired due to Fees

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation), Toshiba Corporation
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Iwasaki, Hiroshi
• Primary Examiner(s): Lee, Thomas
• Assistant Examiner(s): Perveen, Rehana
• Application Number:
  US09/372,678
• Time in Patent Office: 768 Days
• Field of Search: 710/13, 710/17, 710/18, 710/72, 710/74, 711/115
• US Class Current: 710/13
• CPC Class Codes: G11C 7/16 Storage of analogue signals in digital stores using an arrangement comprising analogue/digital [A/D] converters, digital memories and digital/analogue [D/A] converters
• CPC Class Codes: G11C 7/24 Memory cell safety or protection circuits, e.g. arrangements for preventing inadvertent reading or writing; Status cells; Test cells
• CPC Class Codes: G11C 8/20 Address safety or protection circuits, i.e. arrangements for preventing unauthorized or accidental access

Abstract

In a small and thin memory module for sharing data among electronic devices such as information processing apparatuses, a write prohibit state can be visually recognized. A conductive seal is attached to a predetermined position on a support member, thereby setting the memory module in the write prohibit state. The conductive seal visually indicates the write prohibit state. When the memory module is mounted in a connector section of a card-shaped holder, connector pins are electrically connected to each other via the conductive seal. Thus, a write prohibit mechanism is realized at low cost.

Claims

1. An information storage card comprising:

a support card having a first recess on a first surface thereof and a second recess on the first surface thereof, the second recess including a non-conductive material and being adapted to receive therein a state-designating member; and

a nonvolatile semiconductor module for storing information, located in the first recess, the nonvolatile semiconductor module having a flat type connection terminal exposed to an exterior, wherein the second recess has a substantial area with respect to the flat type connection terminal.

2. The information storage card according to claim 1, wherein the second recess has a circular shape and a diameter of approximately 10 mm.

3. The information storage card according to claim 2, wherein the supporting card comprises a non-conductive material.

4. The information storage card according to claim 3, wherein a thickness of the supporting card is approximately 0.76 mm.

5. The information storage card according to claim 4, wherein the first recess is deeper than the second recess.

6. The information storage card according to one of claims 2-5, wherein the state-designating member comprises a conductive material, and wherein the state-designating member indicates that writing of information to the nonvolatile semiconductor module is prohibited.

7. The information storage card according to claim 6, wherein the state-designating member comprises an adhesive seal coated with aluminum.

8. The information storage card according to claim 6, wherein the state-designating member comprises ink.

9. The information storage card according to claim 6, wherein the state-designating member occupies a major portion in the second recess.

10. The information storage card according to claim 9, wherein the state-designating member comprises an adhesive seal coated with aluminum.

11. An information storage card comprising:

a support card comprising a non-conductive material and having a first recess in a first surface thereof and a second recess in the first surface thereof, the second recess being adapted to receive therein a state-designating member, wherein a thickness of the support card is approximately 0.76 mm, and wherein the second recess has a circular shape and has a diameter of approximately 10 mm; and

a nonvolatile semiconductor module for storing information, located in the first recess, the nonvolatile semiconductor module having a flat type connection terminal exposed to an exterior.

12. The information storage card according to claim 11, further comprising, in the second recess, an adhesive seal coated with aluminum as the state-designating member.

13. An information storage card comprising:

a support card having a recess in a first surface thereof and a first designating area on the first surface thereof, the first designating area being adapted to provide thereon a state-designating member and being visibly distinguishable from a remaining portion of the support card; and

a nonvolatile semiconductor module for storing information, located in the recess, the nonvolatile semiconductor module having a flat type connection terminal exposed to an exterior.

14. The information storage card according to claim 13, wherein the first designating area has a substantial ratio with respect to an area of the flat type connection terminal.

15. The information storage card according to claim 13, wherein the first designating area has a circular shape and has a diameter of approximately 10 mm.

16. The information storage card according to claim 15, wherein a size of the supporting card is approximately 37 mm×

45 mm.

17. The information storage card according to one of claims 13 and 16, wherein ;

a size of the nonvolatile semiconductor module is approximately 16.62 mm×

27.59 mm.

18. The information storage card according to claim 13, wherein the supporting card further comprises a second designating area adapted to provide thereon an information label.

19. The information storage card according to claim 18, wherein the first designating area is disposed between the nonvolatile semiconductor module and the second designating area.

20. An information storage card comprising:

a support card comprising a non-conductive material and having a first recess in a first surface thereof and a first designating area on the first surface thereof, wherein the first designating area is adapted to provide thereon a state-designating member, the first designating area is visibly distinguishable from a remaining portion of the support card, and a thickness of the support card is approximately 0.76 mm; and

a nonvolatile semiconductor module for storing information, located in the first recess, the nonvolatile semiconductor module having a flat type connection terminal exposed to an exterior, wherein the designating area has a circular shape and has a diameter of approximately 10 mm.

21. The information storage card according to claim 20, wherein a size of the support card is approximately 37 mm×

45 mm.

22. The information storage card according to one of claims 20 and 21, wherein a size of the nonvolatile semiconductor module is approximately 16.62 mm×

27.59 mm.

23. The information storage card according to one of claims 20 and 21, wherein the support card further comprises a second designating area adapted to provide thereon an information label.

24. The information storage card according to claim 23, wherein the first designating area is disposed between the nonvolatile semiconductor module and the second designating area.

25. An information storage card having a first surface and a second surface, the information storage card comprising:

a nonvolatile semiconductor module for storing information, the nonvolatile semiconductor module having a flat type connection terminal exposed to the first surface; and

a first designating area on the first surface, the first designating area including a non-conductive material, being adapted to provide thereon a state-designating member, and being visibly distinguishable from a remaining portion the information storage card.

26. The information storage card according to claim 25, wherein a thickness of the information storage card is approximately 0.76 mm.

27. The information storage card according to claim 25, wherein the first designating area is circular and has a diameter of approximately 10 mm.

28. The information storage card according to claim 26, wherein a size of the information support card is approximately 37 mm×

45 mm.

29. The information storage card according to one of claim 25, 26, and 28, wherein a size of the nonvolatile semiconductor module is approximately 16.62mm×

27.59 mm.

30. A method of accessing information stored in a nonvolatile semiconductor memory of an information storage card using an interfacing holder and an information processing host device, the method comprising the steps of:

inserting the information storage card into the interfacing holder;

inserting the interfacing holder into the information processing host device; and

detecting a presence or absence of a state-designating member on the information storage card to inhibit or allow writing of information to the nonvolatile semiconductor memory of the information storage card.

31. A method of accessing information stored in a nonvolatile semiconductor memory of an information storage card using an interfacing holder and an information processing host device, the interfacing holder comprising at least two detecting electrodes, the method comprising the steps of:

inserting the information storage card into the interfacing holder;

inserting the interfacing holder into the information processing host device;

establishing contact between the at least two detecting electrodes and a state-designating member on the information storage card; and

detecting a conductivity of the state-designating member using the at least two detecting electrodes, wherein when the state-designating member on the information storage card comprises a conductive material, the interfacing holder prohibits writing of information to the nonvolatile semiconductor memory of the information storage card.

32. A method of accessing information stored in a nonvolatile semiconductor memory of an information storage card using an interfacing holder and an information processing host device, the interfacing holder comprising at least two detecting electrodes, the method comprising the steps of:

applying a state-designating member to the information storage card;

inserting the information storage card into the interfacing holder;

inserting the interfacing holder into the information processing host device;

establishing contact between the at least two detecting electrodes and the state-designating member on the information storage card; and

detecting a conductivity of the state-designating member using the at least two detecting electrodes, wherein when the state-designating member on the information storage card comprises a conductive material, the interfacing holder prohibits writing of information to the nonvolatile semiconductor memory of the information storage card.

33. A method of accessing information stored in a nonvolatile semiconductor memory of an information storage card using an interfacing holder and an information processing host device, the interfacing holder comprising at least two detecting electrodes, and the information storage card comprising a designating area adapted to be contacted by the at least two detecting electrodes, the method comprising the steps of:

inserting the information storage card into the interfacing holder;

inserting the interfacing holder into the information processing host device;

establishing contact between the at least two detecting electrodes and the designating area of the information storage card; and

detecting a non-conductivity of the designating area of the information storage card using the at least two detecting electrodes to allow writing of information to the nonvolatile semiconductor memory of the information storage card.

34. A method of accessing information stored in a nonvolatile semiconductor memory of an information storage card using an information processing host device, the method comprising the steps of:

inserting the information storage card into the information processing host device; and

detecting a presence or absence of a state-designating member on the information storage card to inhibit or allow writing of information to the nonvolatile semiconductor memory of the information storage card.

35. A method of accessing information stored in a nonvolatile semiconductor memory of an information storage card using an information processing host device, the information processing host device having at least two detecting electrodes, the method comprising the steps of:

inserting the information storage card into the information processing host device;

establishing contact between the at least two detecting electrodes and a state-designating member on the information storage card; and

detecting a conductivity of the state-designating member using the at least two detecting electrodes;

wherein when the state-designating member on the information storage card is a conductive material, the interfacing holder prohibits writing of information to the nonvolatile semiconductor memory of the information storage card.

36. A method of accessing information stored in a nonvolatile semiconductor memory of an information storage card using an information processing host device, the information processing host device having at least two detecting electrodes, the method comprising the steps of:

applying a state-designating member to the information storage card;

inserting the information storage card into the information processing host device;

establishing contact between the at least two detecting electrodes and the state-designating member on the information storage card; and

detecting a conductivity of the state-designating member using the at least two detecting electrodes, wherein when the state-designating member on the information storage card comprises a conductive material, the interfacing holder prohibits writing of information to the nonvolatile semiconductor memory of the information storage card.

37. A method of accessing information stored in a nonvolatile semiconductor memory of an information storage card using an information processing host device, the information processing host device comprising at least two detecting electrodes, and the information storage card comprising a designating area adapted to be contacted by the at least two detecting electrodes, the method comprising the steps of:

inserting the information storage card into the information processing host device;

establishing contact between the at least two detecting electrodes and the designating area of the information storage card; and

detecting a non-conductivity of the designating area of the information storage card using the at least detecting electrodes to allow writing of information to the nonvolatile semiconductor memory of the information storage card.

38. An information processing apparatus for use in combination with an information storage device that includes a semiconductor memory, an external connection terminal, and a visibly distinguishable state-indicating area, the information processing apparatus comprising:

an external support member comprising a cavity therein, at least one side wall of the external support member having an opening to receive the information storage device, the cavity including at least a pair of opposing inner faces;

a plurality of first electrodes, formed on one of the pair of opposing inner faces, for providing an electrical coupling for the information storage device to access the semiconductor memory;

at least two second electrodes, formed on the one of the pair of opposing inner faces, for providing contact with the state-indicating area;

a discriminating circuit operably coupled to the second electrodes for discriminating whether or not writing of information to the semiconductor memory is possible; and

a memory controller for controlling access to the semiconductor memory.

39. The information processing apparatus according to claim 38, wherein the discriminating circuit detects a conductive state between the at least two second electrodes determine that writing information to the semiconductor memory is not possible.

40. The information processing apparatus according to claim 38, wherein the discriminating circuit detects a non-conductive state between the at least two second electrodes to determine that writing information to the semiconductor memory is possible.

41. The information processing apparatus according to any one of claims 39 and 40, wherein the external support member is a card-shaped holder adapted for mounting in an information processing host device.

42. The information processing apparatus according to claim 41, wherein the external support member has a size specified by PCMCIA standards.

43. The information processing apparatus according to claim 42, wherein the at least two second electrodes are arranged at a distance of at least approximately 1 mm from each other.

44. The information processing apparatus according to any one of claims 39 and 40, wherein the at least two second electrodes are arranged at a distance of at least approximately 1 mm from each other.

45. An information processing apparatus for use in combination with an information storage device that includes a semiconductor memory, an external connection terminal, and a visibly distinguishable state-indicating area, the information processing apparatus comprising:

an external support member comprising a cavity therein, at least one side wall of the external support member having an opening to receive the information storage device, the cavity including at least a pair of opposing inner faces;

a plurality of first electrodes, formed on one of the pair of opposing inner faces, for providing an electrical coupling for the information storage device to access the semiconductor memory;

a discriminating circuit for discriminating whether or not writing information to the semiconductor memory is possible by detecting an absence or a presence of a state-indicating member on the state-indicating area; and

a memory controller for controlling access to the semiconductor memory.

46. The information processing apparatus according to claim 45, wherein the discriminating circuit detects the absence of the state-indicating member on the state-indicating area by detecting a non-conductivity of the state-indicating area.

47. The information processing apparatus according to claim 45, wherein the discriminating circuit detects the presence of the state-indicating member on the state-indicating area by detecting a conductivity of the state-indicating area.

48. The information processing apparatus according to any one of claims 46 and 47, wherein the external support member is a card-shaped holder adapted for mounting in an information processing host device.

49. The information processing apparatus according to claim 48, wherein the external support member has a size specified PCMCIA standards.

50. An information storage card apparatus having a first surface and a second surface, the information storage card apparatus comprising:

a semiconductor memory module including a semiconductor memory and a flat type connection terminal electrically coupled to the semiconductor memory and exposed to the first surface; and

a first designating area on the first surface, the first designating area including a non-conductive material and being adapted to provide thereon a state-designating member.

51. The information storage card apparatus according to claim 50, wherein a thickness of the information storage card apparatus is approximately 0.76 mm.

52. The information storage card apparatus according to claim 51, wherein the first designating area has a diameter of approximately 10 mm.

53. The information storage card apparatus according to claim 52, wherein a size of the information storage card apparatus is approximately 37 mm×

45 mm.

54. The information storage card apparatus according to claim 53, wherein a size of the semiconductor memory module is approximately 16.62 mm×

27.59 mm