Structure and method for preventing barrier failure

  • US 6,316,132 B1
  • Filed: 09/02/1999
  • Issued: 11/13/2001
  • Est. Priority Date: 09/02/1999
  • Status: Expired due to Term
First Claim
Patent Images

1. A barrier metal layer provided in an opening of an integrated circuit, the opening including a base and sidewalls, the barrier metal layer formed between a titanium layer and a tungsten layer in a semiconductor device, the titanium layer substantially following contours of the base and the sidewalls of the opening, the barrier metal layer including:

  • a first titanium-nitride layer having a first grain boundary, the first titanium-nitride layer being formed on the titanium layer and substantially following contours of the titanium layer in the opening; and

    a second titanium-nitride layer having a second grain boundary, the second titanium-nitride layer being formed above and substantially following contours of the first titanium-nitride layer in the opening, the tungsten layer being formed on the second titanium-nitride layer.

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