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Infrared correction in color scanners

  • US 6,316,284 B1
  • Filed: 09/07/2000
  • Issued: 11/13/2001
  • Est. Priority Date: 09/07/2000
  • Status: Expired due to Term
First Claim
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1. A method for fabricating semiconductor chips comprising:

  • (a) providing a semiconductor wafer having a main surface defining chip areas, the chip areas defining bonding pads and three linear arrays of photosites;

    (b) depositing a clear layer on the semiconductor wafer;

    (c) depositing a first primary color filter layer on a first linear array of photosites;

    (d) depositing a second primary color filter layer on a second linear array of photosites;

    (e) depositing a third primary color filter layer on a regularly-spaced subset of photosites of a third linear array of photosites; and

    (f) depositing an infrared filter layer on the photosites in the third linear array which are not in said subset of photosites.

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