Infrared correction in color scanners
First Claim
Patent Images
1. A method for fabricating semiconductor chips comprising:
- (a) providing a semiconductor wafer having a main surface defining chip areas, the chip areas defining bonding pads and three linear arrays of photosites;
(b) depositing a clear layer on the semiconductor wafer;
(c) depositing a first primary color filter layer on a first linear array of photosites;
(d) depositing a second primary color filter layer on a second linear array of photosites;
(e) depositing a third primary color filter layer on a regularly-spaced subset of photosites of a third linear array of photosites; and
(f) depositing an infrared filter layer on the photosites in the third linear array which are not in said subset of photosites.
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Abstract
The present invention generally relates to a digital scanner for scanning images. More specifically, the present invention is directed to a method and apparatus for enhancing the quality of scanned images obtained by filtering out the infrared component of digital data to provide enhanced digital images.
66 Citations
14 Claims
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1. A method for fabricating semiconductor chips comprising:
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(a) providing a semiconductor wafer having a main surface defining chip areas, the chip areas defining bonding pads and three linear arrays of photosites;
(b) depositing a clear layer on the semiconductor wafer;
(c) depositing a first primary color filter layer on a first linear array of photosites;
(d) depositing a second primary color filter layer on a second linear array of photosites;
(e) depositing a third primary color filter layer on a regularly-spaced subset of photosites of a third linear array of photosites; and
(f) depositing an infrared filter layer on the photosites in the third linear array which are not in said subset of photosites. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for fabricating semiconductor chips comprising:
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(a) providing a semiconductor wafer having a main surface defining chip areas, the chip areas defining bonding pads and three linear arrays of photosites;
(b) depositing a clear layer on the semiconductor wafer;
(c) depositing a first primary color filter layer on a first linear array of photosites;
(d) depositing a second primary color filter layer on a regularly-spaced subset of photosites of a second linear array of photosites;
(e) depositing a third primary color filter layer on a third linear array of photosites; and
(f) depositing an infrared filter layer on the, photosites in the second linear array which are not in said subset of photosites. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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Specification