Use of silicon oxynitride ARC for metal layers

  • US 6,326,231 B1
  • Filed: 12/08/1998
  • Issued: 12/04/2001
  • Est. Priority Date: 12/08/1998
  • Status: Expired due to Term
First Claim
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1. A method of forming a silicon oxynitride antireflection coating over a metal layer, comprising:

  • providing a semiconductor substrate comprising the metal layer over at least part of the semiconductor substrate;

    depositing a silicon oxynitride layer on the metal layer having a thickness from about 100 Å

    to about 1500 Å

    ; and

    forming an oxide layer having a thickness from about 5 Å

    to about 50 Å

    over the silicon oxynitride layer to provide the silicon oxynitride antireflection coating, wherein the oxide layer forms a barrier to migration of nitrogen atoms from the silicon oxynitride layer.

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