Method for treating an electrochemical device
DCFirst Claim
1. A method of processing an electrochemical device having at least one carrier substrate in contact with a stack of functional layers comprising two electroconductive layers and at least one electrochemically active layer, which is capable of reversibly and simultaneously inserting ions and which is arranged between the two electroconductive layers, the method comprisinglocally inhibiting a functionality of at least one of the functional layers, with the exception of one of the two electroconductive layers, by cutting through the at least one of the layers along a closed line to delimit an inactive region of the stack that is located between the closed line and an edge of the stack so as to delimit an inactive peripheral region in the stack.
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Abstract
The invention relates to a method of processing an electrochemical device having at least one carrier substrate (1) provided with a stack (2) of functional layers, including at least one electrochemically active layer (4) which is capable of reversibly and simultaneously inserting ions and electrons and is arranged between two electroconductive layers, in particular a device of the electrochromic type. The processing consists in locally inhibiting the functionality of at least one of the functional layers, with the exception of one of the electroconductive layers (3, 8), so as to delimit an inactive peripheral region in the stack (2).
183 Citations
20 Claims
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1. A method of processing an electrochemical device having at least one carrier substrate in contact with a stack of functional layers comprising two electroconductive layers and at least one electrochemically active layer, which is capable of reversibly and simultaneously inserting ions and which is arranged between the two electroconductive layers, the method comprising
locally inhibiting a functionality of at least one of the functional layers, with the exception of one of the two electroconductive layers, by cutting through the at least one of the layers along a closed line to delimit an inactive region of the stack that is located between the closed line and an edge of the stack so as to delimit an inactive peripheral region in the stack.
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9. A method of processing an electrochemical device having at least one carrier substrate in contact with a stack of functional layers comprising two electroconductive layers and at least one electrochemically active layer, which is capable of reversibly and simultaneously inserting ions and which is arranged between the two electroconductive layers, the method comprising
locally inhibiting a functionality of at least one of the functional layers, with the exception of one of the electroconductive layers, so as to delimit an inactive contour or a non-peripheral inactive region in the stack.
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18. A method of processing an electrochemical device having at least one carrier substrate in contact with a stack of functional layers comprising two electroconductive layers and at least one electrochemically active layer, which is capable of reversibly and simultaneously inserting ions and which is arranged between the two electroconductive layers, the method comprising
locally inhibiting a functionality of at least one of the functional layers, with the exception of one of the electroconductive layers, by cutting through the at least one of the layers along a closed line to delimit an inactive region of the stack that is located between the closed line and an edge of the stack so as to delimit an inactive peripheral region in the stack; - and
locally inhibiting a functionality of the at least one of the functional layers, with the exception of the one of the electroconductive layers, so as to delimit an inactive contour or a non-peripheral inactive region in the stack. - View Dependent Claims (19, 20)
the two electroconductive layers include a first electroconductive layer more resistant, harder and/or denser than the other functional layers; - and
the inhibiting affects all of the functional layers apart from the first electroconductive layer.
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20. An electrochemical device processed using the method of claim 18, wherein during operation the device has a leakage current less than or equal to 20 μ
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Specification