Manufacturing method of semiconductor device

  • US 6,346,464 B1
  • Filed: 06/27/2000
  • Issued: 02/12/2002
  • Est. Priority Date: 06/28/1999
  • Status: Expired due to Term
First Claim
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1. A semiconductor device manufacturing method of forming a second conductivity-type region by irradiating impurity ions onto a first conductivity-type semiconductor substrate;

  • wherein the impurity ion irradiated region is restricted by a shield mask intercepting said impurity ions and the impurity ion acceleration energy is controlled to provide a uniform impurity distribution in the direction of irradiation in said second conductivity-type region.

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