Manufacturing method of semiconductor device
First Claim
1. A semiconductor device manufacturing method of forming a second conductivity-type region by irradiating impurity ions onto a first conductivity-type semiconductor substrate;
- wherein the impurity ion irradiated region is restricted by a shield mask intercepting said impurity ions and the impurity ion acceleration energy is controlled to provide a uniform impurity distribution in the direction of irradiation in said second conductivity-type region.
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Accused Products
Abstract
A method of manufacturing a low power dissipation semiconductor power device is provided which is easy to perform and suitable for mass production. When a first and second conductivity-type regions are formed on a semiconductor substrate which is selectively irradiated by impurity ions, an excellent super junction is formed by controlling the ion acceleration energy and the width of each irradiated region so that the first and second conductivity-type regions may have a uniform impurity distribution and a uniform width along the direction of irradiation. Another method of manufacturing a low power dissipation semiconductor power device having an excellent super junction is provided which selectively irradiates a collimated neutron beam onto a P+ silicon ingot and forms an N+ region that has a uniform impurity distribution and a uniform width along the direction of irradiation in the P+ silicon ingot.
137 Citations
18 Claims
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1. A semiconductor device manufacturing method of forming a second conductivity-type region by irradiating impurity ions onto a first conductivity-type semiconductor substrate;
wherein the impurity ion irradiated region is restricted by a shield mask intercepting said impurity ions and the impurity ion acceleration energy is controlled to provide a uniform impurity distribution in the direction of irradiation in said second conductivity-type region.
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2. A semiconductor device manufacturing method of forming at least one of a first and second conductivity-type regions in a semiconductor substrate by selectively irradiating impurity ions onto said semiconductor substrate;
wherein the impurity distributions in said first and second conductivity-type regions are uniform in the direction of irradiation, and the impurity ion acceleration energy and the area of each region irradiated by said impurity ions are controlled so that the cross-sectional shape and cross-section area of said first and second conductivity-type regions on planes perpendicular to the direction of irradiation may be uniform in the direction of irradiation. - View Dependent Claims (3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A semiconductor device manufacturing method of forming a first conductivity-type region and a second conductivity-type region on a semiconductor substrate by irradiating impurity ions onto said semiconductor substrate;
wherein the regions irradiated by impurity ions are restricted by impurity ion intercepting shield masks which are in an inverted imaging relation to each other so that the cross-sectional shape and the cross-section area of the first and second conductivity-type regions on planes perpendicular to the direction of irradiation may be uniform along the direction of irradiation, and the impurity ion acceleration energy is controlled to make the impurity ion distributions in the first and second conductivity-type regions uniform along the direction of irradiation. - View Dependent Claims (13)
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14. A semiconductor device manufacturing method of forming an N+ region by irradiating a neutron beam onto a semiconductor ingot having a P+ region;
wherein the incident direction of said neutron beam is collimated to make the cross-sectional shape and the cross-section area of said N+ region on planes perpendicular to the direction of irradiation uniform along the direction of irradiation, and the impurity distribution in said N+ region is controlled to be uniform along the direction of irradiation. - View Dependent Claims (15, 16, 17, 18)
Specification