Semiconductor device and method of manufacturing the same

  • US 6,352,879 B1
  • Filed: 06/27/2000
  • Issued: 03/05/2002
  • Est. Priority Date: 01/14/1998
  • Status: Expired due to Term
First Claim
Patent Images

1. A method of manufacturing a semiconductor device comprising:

  • (a) forming a first adhesion layer on a back surface of a first wafer on which no circuit is formed, a circuit being formed on a front surface of the first wafer;

    (b) producing separate first semiconductor chips from said first wafer by dicing;

    (c) mounting said first semiconductor chip on a wiring layer with its back surface facing said wiring layer;

    (d) forming a second adhesion layer on a back surface of a second wafer on which no circuit is formed, a circuit being formed on a front surface of the first wafer;

    (e) producing separate second semiconductor chips from said second wafer by dicing; and

    (f) mounting said second semiconductor chip on said first semiconductor chip with its back surface facing said first semiconductor chip.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×