Combined gate cap or digit line and spacer deposition using HDP

  • US 6,368,988 B1
  • Filed: 07/16/1999
  • Issued: 04/09/2002
  • Est. Priority Date: 07/16/1999
  • Status: Expired due to Fees
First Claim
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1. A process for forming a silicon nitride or silicon oxide film on the horizontal and vertical surfaces of a semiconductor substrate, comprising the steps of:

  • disposing said substrate within the reaction zone of a high density plasma reactor;

    introducing a first gas mixture containing a silicon compound and at least one other reactant gas capable of reacting with said silicon compound to form either silicon nitride or silicon oxide into said reaction zone containing said substrate;

    maintaining the pressure in said reaction zone from about 0.1 to about 100 millitorr;

    passing said first gas mixture into contact with said substrate while exciting said first gas mixture with a high density plasma and biasing said substrate with a first bias power for a period of time sufficient to form a first layer of silicon dioxide or silicon nitride film on said substrate;

    introducing a second gas mixture into said reaction zone and passing said second gas mixture into contact with said substrate while biasing said substrate with a second bias power and exciting said second gas mixture with a high density plasma; and

    wherein said first bias power is within the range of about 0 to about 500 Watts and said second bias power is within the range of about 500 to about 3000 Watts and a flow rate of said silicon compound containing gas of said first gas mixture is decreased during application of said second bias power to form a silicon nitride or silicon oxide film of a different thickness on the vertical surfaces than on the horizontal surfaces of said substrate.

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