Method for forming a conductive plug between conductive layers of an integrated circuit

DC
  • US 6,372,638 B1
  • Filed: 06/22/2000
  • Issued: 04/16/2002
  • Est. Priority Date: 02/18/1997
  • Status: Expired due to Term
First Claim
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1. A method for forming a contact structure, the method comprising the steps of:

  • forming a first conductive material overlying a semiconductor substrate;

    forming a dielectric layer overlying the first conductive layer;

    forming a resist layer over the dielectric layer;

    patterning the resist layer to form an opening that exposes portions of the dielectric layer;

    placing the semiconductor substrate into a reactive ion etching chamber and in-situ processing the semiconductor substrate as follows;

    etching portions of the dielectric layer using a gas mixture that includes a fluorocarbon source gas to form an opening in the dielectric layer, the opening having a bottom portion and a sidewall portion;

    etching a portion of the resist layer using a gas mixture that includes a fluorocarbon source gas and an oxygen source gas to remove the portion of the resist layer and expose a top surface portion of the dielectric layer adjacent the sidewall portion;

    etching the top surface portion of the dielectric layer adjacent the sidewall portion to form a taper that extends between a top surface of the dielectric layer and the sidewall portion, wherein the taper towards the top surface portion has a radius Y and the taper towards the sidewall portion has a radius X wherein X<

    Y; and

    removing remaining portions of the resist layer;

    depositing a second conductive material within the opening; and

    polishing away a top portion of the conductive material and a top portion of the dielectric layer to remove the taper.

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