Multi-layered gate for a CMOS imager

• US 6,376,868 B1
• Filed: 06/15/1999
• Issued: 04/23/2002
• Est. Priority Date: 06/15/1999
• Status: Expired due to Term

• Current Assignee: Aptina Imaging Corporation (ON Semiconductor Corporation)
• Original Assignee: Micron Technology, Inc.
• Inventors: Rhodes, Howard E.
• Primary Examiner(s): Lee, Eddie
• Assistant Examiner(s): Fenty, Jesse A.
• Application Number:
  US09/333,011
• Time in Patent Office: 1,043 Days
• Field of Search: 257/232, 257/233, 257/214, 257/215, 257/216
• US Class Current: 257/215
• CPC Class Codes: H01L 21/823842 gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
• CPC Class Codes: H01L 27/14603 Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 27/14643 Photodiode arrays; MOS imagers
• CPC Class Codes: H01L 27/14645 Colour imagers
• CPC Class Codes: H01L 27/14689 MOS based technologies
• CPC Class Codes: H01L 27/14692 Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon

Abstract

A multi-layered gate for use in a CMOS or CCD imager formed with a second gate at least partially overlapping it. The multi-layered gate is a complete gate stack having an insulating layer, a conductive layer, an optional silicide layer, and a second insulating layer, and has a second gate formed adjacent to it which has a second conductive layer that extends at least partially over the surface of the multi-layered gate. The multi-layered gate has improved insulation, thereby resulting in fewer shorts between the conductive layers of the two gates. Also disclosed are processes for forming the multi-layered gate and the overlapping gate.

Claims

1. A pixel sensor cell for use in an imaging device, said pixel sensor cell comprising:

a photosensitive region of a first conductivity type formed on a substrate;

a floating diffusion region of a second conductivity type formed in the substrate and spaced from said photosensitive region;

a first insulating layer formed on said substrate;

a first gate formed on said first insulating layer over said photosensitive region, said first gate comprising a first conductive layer on a first portion of said first insulating layer, a second insulating layer on the first conductive layer, and insulating spacers for defining structure in said substrate, said insulating spacers being formed on the sides of said first gate; and

a second gate formed on a second portion of said first insulating layer, said second portion of said first insulating layer overlying said structure in said substrate, and said second gate comprising a semitransparent conductive layer formed on said second insulating layer and extending at least partially over said first gate.

2. The pixel sensor cell of claim 1, wherein the first insulating layer is a layer selected from the group consisting of silicon oxide, silicon nitride, silicon oxynitride, ON, NO, and ONO.

3. The pixel sensor cell of claim 1, wherein the first conductive layer is a layer of doped polysilicon.

4. The pixel sensor cell of claim 1, wherein said first gate further comprises a barrier metal layer on the first conductive laver.

5. The pixel sensor cell of claim 4, wherein the barrier metal is titanium nitride.

6. The pixel sensor cell of claim 4, wherein the barrier metal is tungsten nitride.

7. The pixel sensor cell of claim 4, wherein said first gate further comprises a tungsten layer on the barrier metal layer.

8. The pixel sensor cell of claim 1, wherein said first gate further comprises a silicide layer on the first conductive layer.

9. The pixel sensor cell of claim 8, wherein the silicide layer is a layer of metal silicide selected from the group consisting of titanium silicide, tungsten silicide, molybdenum silicide, tantalum silicide, platinum silicide, palladium silicide, iridium silicide, and cobalt silicide.

10. The pixel sensor cell of claim 1, wherein the second insulating layer is a deposited silicon oxide layer.

11. The pixel sensor cell of claim 1, wherein the second insulating layer material is silicon nitride.

12. The pixel sensor cell of claim 1, wherein the second insulating layer is ON.

13. The pixel sensor cell of claim 1, wherein the second insulating layer is NO.

14. The pixel sensor cell of claim 1, wherein the second insulating material is ONO.

15. The pixel sensor cell of claim 1, wherein the insulating spacers are silicon oxide spacers.

16. The pixel sensor cell of claim 1, wherein the insulating spacers are silicon nitride spacers.

17. The pixel sensor cell of claim 1, wherein the insulating spacers are silicon oxynitride spacers.

18. The pixel sensor cell of claim 1, wherein the insulating spacers are ON spacers.

19. The pixel sensor cell of claim 1, wherein the insulating spacers are NO spacers.

20. The pixel sensor cell of claim 1, wherein the insulating spacers are ONO spacers.

21. The pixel sensor cell of claim 1, wherein the second conductive layer is a layer of doped polysilicon.

22. The pixel sensor cell of claim 1, wherein the second conductive layer is a layer of semitransparent conductive material.

23. The pixel sensor cell of claim 22, wherein the semitransparent conductive material is tin oxide.

24. The pixel sensor cell of claim 22, wherein the semitransparent conductive material is indium tin oxide.

25. The pixel sensor of claim 22, wherein the semitransparent conductive material is a laver of doped polysilicon.

26. The pixel sensor cell of claim 1, wherein said second gate further comprises a barrier metal layer on the second conductive layer.

27. The pixel sensor of claim 26, wherein the barrier metal is titanium nitride.

28. The pixel sensor of claim 26, wherein the barrier metal is tungsten nitride.

29. The pixel sensor cell of claim 26 wherein said second gate further comprises a tungsten layer on the barrier metal layer.

30. The pixel sensor cell of claim 1, wherein said second gate further comprises a silicide layer on the second conductive layer.

31. The pixel sensor cell of claim 1, wherein the imaging device is a CMOS imager.

32. The pixel sensor cell of claim 1, wherein the imaging device is a CCD imager.

33. The pixel sensor cell of claim 1, wherein said first gate is a source follower gate, and said second gate is a row select gate.

34. The pixel sensor cell of claim 1, wherein said first gate is a row select gate, and said second gate is a source follower gate.

35. The pixel sensor cell of claim 1, wherein said first gate is a transfer gate and said second gate is a photogate.

36. The pixel sensor cell of claim 1, wherein said first gate is a photogate and said second gate is a transfer gate.

37. A pixel sensor cell for use in an imaging device, said pixel sensor cell comprising:

a photosensitive region of a first conductivity type formed in a substrate;

a floating diffusion region of a second conductivity type formed in the substrate and spaced from said photosensitive region;

a first insulating layer formed on the substrate;

a first gate formed on said first insulating layer over said photosensitive region, said first gate comprising a first conductive layer on said first insulating layer, a second insulating layer on the first conductive layer, and insulating spacers formed on the sides of said first gate; and

a second gate formed on said first insulating layer, said second gate comprising a semitransparent conductive layer formed on said first insulating layer and extending at least partially over said first gate.

38. The pixel sensor cell of claim 37, wherein the first conductive layer is a layer of doped polysilicon.

39. The pixel sensor cell of claim 37, wherein the first conductive layer is a layer of semitransparent conductive material.

40. The pixel sensor cell of claim 37, wherein the second insulating layer is a layer of silicon oxide.

41. The pixel sensor cell of claim 37, wherein the insulating spacers are spacers selected from the group consisting of silicon oxide spacers, silicon nitride spacers, silicon oxynitride spacers, ON spacers, NO spacers, and ONO spacers.

42. The pixel sensor cell of claim 37, wherein the semitransparent conductive material is doped polysilicon.

43. The pixel sensor cell of claim 37, wherein the semitransparent conductive material is tin oxide.

44. The pixel sensor cell of claim 37, wherein the semitransparent conductive material is indium tin oxide.

45. The pixel sensor cell of claim 37, wherein the imaging device is a CMOS imager.

46. The pixel sensor cell of claim 37, wherein the imaging device is a CCD imager.

47. The pixel sensor cell of claim 37, wherein said second gate further comprises a barrier metal layer on the semitransparent conductive layer.

48. The pixel sensor cell of claim 47, wherein the barrier metal is titanium nitride.

49. The pixel sensor of claim 47, wherein the barrier metal is tungsten nitride.

50. The pixel sensor cell of claim 47, wherein said second gate further comprises a tungsten layer on the barrier metal layer.

51. The pixel sensor cell of claim 37, wherein said second gate further comprises a silicide layer on the semitransparent conductive layer.

52. A pixel sensor cell for use in an imaging device, said pixel sensor cell comprising:

a photosensitive region of a first conductivity type formed in a substrate;

a floating diffusion region of a second conductivity type formed in the substrate and spaced from said photosensitive region;

a first insulating layer formed on the substrate;

a first gate formed on said first insulating layer over said photosensitive region, said first gate comprising a first conductive layer on said first insulating layer, a second insulating layer on the first conductive layer, and insulating spacers formed on the sides of said first gate; and

a second gate formed on said second insulating layer, said second gate comprising a semitransparent conductive layer formed on said second insulating layer and extending at least partially over said first gate.

53. The pixel sensor cell of claim 52, wherein the first conductive layer is a layer of doped polysilicon.

54. The pixel sensor cell of claim 52, wherein the first conductive layer is a layer of semitransparent conductive material.

55. The pixel sensor cell of claim 52, wherein the second insulating layer is a layer of silicon oxide.

56. The pixel sensor cell of claim 52, wherein the insulating spacers are spacers selected from the group consisting of silicon oxide spacers, silicon nitride spacers, silicon oxynitride spacers, ON spacers, NO spacers, and ONO spacers.

57. The pixel sensor cell of claim 52, wherein the semitransparent conductive material is doped polysilicon.

58. The pixel sensor cell of claim 52, wherein the semitransparent conductive material is tin oxide.

59. The pixel sensor cell of claim 52, wherein the semitransparent conductive material is indium tin oxide.

60. The pixel sensor cell of claim 52, wherein the imaging device is a CMOS imager.

61. The pixel sensor cell of claim 52, wherein the imaging device is a CCD imager.

62. The pixel sensor cell of claim 52, wherein said second gate further comprises a barrier metal layer on the semitransparent conductive layer.

63. The pixel sensor cell of claim 62, wherein the barrier metal is titanium nitride.

64. The pixel sensor of claim 62, wherein the barrier metal is tungsten nitride.

65. The pixel sensor cell of claim 62, wherein said second gate further comprises a tungsten layer on the barrier metal layer.

66. The pixel sensor cell of claim 52, wherein said second gate further comprises a silicide layer on the semitransparent conductive layer.