Thermally-assisted magnetic random access memory (MRAM)
First Claim
1. A memory array of storage cells comprising:
- a) an array of electrically conducting bit lines and electrically conducting word lines which form a plurality of intersections therebetween, b) a storage cell disposed at each of said intersections, said storage cell comprising at least one changeable magnetic region characterized by a magnetization state which can be changed by applying thereto a selected external magnetic field, said changeable magnetic region comprising a material whose magnetization state is more easily changed upon a change in the temperature thereof, and c) a heat generator for changing the temperature of said changeable magnetic region of only a selected one of said array of storage cells at any moment.
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Accused Products
Abstract
It is important to ensure good selectivity of a single magnetic tunnel junction storage cell within a memory array without affecting nearby storage cells. For this purpose, this memory array of storage cells preferably comprises a) an array of electrically conducting bit lines and electrically conducting word lines which form intersections therebetween, b) a storage cell disposed at each of said intersections, each storage cell comprising at least one reversible magnetic region or layer characterized by a magnetization state which can be reversed by applying thereto a selected external magnetic field, said reversible magnetic layer comprising a material whose magnetization state is more easily reversed upon a change in the temperature thereof, and c) a temperature change generator for changing the temperature of said reversible magnetic layer of only a selected one of said array of storage cells at any moment. To select a cell, it is preferable to select a cell by using a brief pulse of tunnelling current between the intersecting bit and word lines at that cell in order to provide sufficient Joule heating to facilitate a change in the magnetization state of its reversible magnetic layer, which preferably comprises a ferrimagnetic material.
312 Citations
11 Claims
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1. A memory array of storage cells comprising:
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a) an array of electrically conducting bit lines and electrically conducting word lines which form a plurality of intersections therebetween, b) a storage cell disposed at each of said intersections, said storage cell comprising at least one changeable magnetic region characterized by a magnetization state which can be changed by applying thereto a selected external magnetic field, said changeable magnetic region comprising a material whose magnetization state is more easily changed upon a change in the temperature thereof, and c) a heat generator for changing the temperature of said changeable magnetic region of only a selected one of said array of storage cells at any moment. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification