Active pixel sensor with fully-depleted buried photoreceptor

• US 6,388,243 B1
• Filed: 03/01/2000
• Issued: 05/14/2002
• Est. Priority Date: 03/01/1999
• Status: Expired due to Term

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Photobit Corporation (Micron Technology, Inc.)
• Inventors: Fossum, Eric R., Berezin, Vladimir
• Primary Examiner(s): Lee, John R.
• Application Number:
  US09/516,433
• Time in Patent Office: 804 Days
• Field of Search: 250/208.1, 250/208.2, 250/214.R, 250/214.1, 257/291, 257/292, 257/290, 257/257, 257/258, 257/35, 257/57, 257/431, 257/443, 257/461, 257/233, 257/234, 257/239
• US Class Current: 250/208.1
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 27/14689 MOS based technologies

Abstract

A fully depleted photodiode accumulates charge into both the diode and a separate floating diffusion. The floating diffusion has less capacitance that the overall diode, thereby resulting in a knee-shaped transfer characteristic for charge accumulation. The fully depleted photodiode also include two PN junctions, one near the surface and the other buried below the surface.

Claims

1. A photosensor comprising:

a semiconductor substrate;

a buried photodiode in said semiconductor substrate, having a top surface which is separated from a surface of the substrate by a first area of the substrate, and a bottom surface which contacts said substrate; and

a photocarrier reading element which has a transfer curve with a first portion for a first part of incoming light, that has a first slope, and a second portion for a second part of the light that has a second slope, where said second slope is more gradual than said first slope.

2. A photosensor as in claim 1 wherein said photocarrier reading element includes a floating diffusion, wherein said floating diffusion fills with charge to produce said second slope, and said photodiode fills with charge to produce said first slope.

3. A photosensor as in claim 2 further comprising a controllable vertical diffusion bridge to control accumulation exchange in said photodiode.

4. A photosensor as in claim 3 wherein said controllable vertical diffusion bridge is formed by a reset transistor.

5. A photosensor as in claim 2 further comprising a second diffusion region, separating said photodiode from said floating diffusion region.

6. A photosensor as in claim 5 further comprising a controlling transistor, controlling whether said first diffusion region will be coupled to said floating diffusion region.

7. A photosensor as in claim 3 wherein said substrate is a continuous material from said first area to said bottom area.

8. A photosensor as in claim 3 further comprising an output transistor, configured as a follower, and connected directly to said floating diffusion.

9. A photosensor comprising:

a semiconductor substrate having an upper surface;

a photodiode, which is fully depleted, is formed of a first conductivity type material, and is buried below said upper surface to leave a portion of the substrate over the photodiode and a portion of the substrate below the photodiode;

a floating diffusion region, formed of the same conductivity type of material as the photodiode, and coupled to the photodiode; and

a reset element, selectively erecting a vertical diffusion bridge, which when lowered, allows charge in the photodiode and floating diffusion to spill to and which when raised maintains charge in said floating diffusion and photodiode.

10. A photosensor as in claim 9, wherein said semiconductor substrate is an opposite conductivity type to said photodiode.

11. A photosensor as in claim 9, further comprising a second diffusion, coupled to said photodiode;

and

a transistor separating between said second diffusion and said floating diffusion region, said second transistor selectively turned on to transfer charge to said floating diffusion region.

12. A photosensor as in claim 9 further comprising a reset diffusion and said reset element is lowered to transfer charge to said reset diffusion.

16. A photo sensor as in claim 9,wherein said floating diffusion region is directly coupled to the photo diode with no transfer gate therebetween.

17. A photo sensor as in claim 9, further comprising a transfer gate, coupled between said photo diode and said floating diffusion region.

13. A method comprising:

using a buried photodiode to accumulate charge in a way that produces a transfer characteristic having a first steeper slope for lower light levels and a second more gradual slope for higher light levels.

14. A method as in claim 13, wherein said using comprises coupling said buried photo diode directly to a floating diffusion with no transfer gate therebetween.

15. A method as in claim 13, further comprising causing a diffusion shield to be erected to accumulate said charge.

18. A photo sensor, comprising:

a semiconductor substrate;

a buried photo diode in said semiconductor substrate, defining a first PN junction, and a second PN junction, wherein said first and second PN junctions have different characteristics, and where said first PN junction is optimized for receiving incoming radiation having different characteristics then said second PN junction.

19. A photo sensor as in claim 18, further comprising a photo carrier reading element which has a transfer curve with a first portion for a first part of incoming radiation that has a first slope and a second portion for a second part of incoming radiation that has a second slope.

20. A photo sensor as in claim 18, wherein one of said PN junctions is optimized for photosensitivity to blue and green, and another of said PN junctions is optimized for photosensitivity to green and red.