Low dielectric constant etch stop layers in integrated circuit interconnects

CAFC
  • US 6,388,330 B1
  • Filed: 02/01/2001
  • Issued: 05/14/2002
  • Est. Priority Date: 02/01/2001
  • Status: Expired due to Term
First Claim
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1. An integrated circuit comprising:

  • a semiconductor substrate having a semiconductor device provided thereon;

    a first dielectric layer formed over the semiconductor substrate having a first opening provided therein;

    a first conductor core filling the first opening and connected to the semiconductor device;

    an etch stop layer of silicon nitride formed over the first dielectric layer and the first conductor core, the etch stop layer having a dielectric constant below 5.5;

    a second dielectric layer formed over the etch stop layer and having a second opening provided therein open to the first conductor core;

    a second conductor core filling the second opening and connected to the first conductor core.

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