Selectively activatable solar cells for integrated circuit analysis
First Claim
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1. A method of manufacturing an integrated circuit device having target circuitry and of facilitating post-manufacturing analysis of the integrated circuit device, the method comprising:
- forming a solar cell in the integrated circuit device;
coupling the solar cell to the target circuitry, wherein in response to light, the solar cell couples current to the target circuitry; and
packaging the integrated circuit and arranging the solar cell to be maintained unexposed to light, wherein during post-manufacturing analysis, the integrated circuit is accessed and the solar cell is exposed to light for analyzing the integrated circuit.
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Abstract
An integrated circuit manufacturing approach involves using a solar cell and facilitating post-manufacturing analysis. According to an example embodiment of the present invention, a solar cell is formed in an integrated circuit device and coupled to target circuitry in the device. The solar cell is activated and provides power to the target circuitry. In response to the solar cell providing power to the target circuitry, the integrated circuit is analyzed.
57 Citations
19 Claims
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1. A method of manufacturing an integrated circuit device having target circuitry and of facilitating post-manufacturing analysis of the integrated circuit device, the method comprising:
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forming a solar cell in the integrated circuit device;
coupling the solar cell to the target circuitry, wherein in response to light, the solar cell couples current to the target circuitry; and
packaging the integrated circuit and arranging the solar cell to be maintained unexposed to light, wherein during post-manufacturing analysis, the integrated circuit is accessed and the solar cell is exposed to light for analyzing the integrated circuit. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
forming a n-doped region in the semiconductor device; and
forming a p-doped region in the n-doped region, wherein the p-doped region covers about all of one side of the n-doped region except a n-doped contact portion.
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13. The method of claim 1, wherein activating at least one solar cell comprises:
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directing light having a wavelength of about 1064 nanometers at the solar cell;
generating carriers in a depletion region at a p-n junction and creating electron-hole pairs; and
powering the device.
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14. A method for manufacturing an integrated circuit device and facilitating post-manufacturing analysis, the method comprising:
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forming bulk silicon having a front side and a back side;
forming a metal via in the bulk silicon;
polishing the front side of the bulk silicon;
forming a circuit layer having target circuitry on the polished front side of the bulk silicon and coupling the target circuitry to the metal via;
polishing the back side of the bulk silicon;
forming epitaxial silicon on the polished back side of the bulk silicon; and
forming a solar cell on the back side of the bulk silicon and coupling the solar cell to the metal via to facilitate activation of the target circuitry and analysis of the integrated circuit device. - View Dependent Claims (15, 16, 17, 18, 19)
forming p-doped epitaxial silicon on the back side; and
forming an n-doped region over the p-doped epitaxial silicon.
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16. The method of claim 15, wherein the epitaxial silicon includes amorphous silicon.
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17. The method of claim 14, wherein forming a solar cell comprises bonding the solar cell to the back side of the bulk silicon.
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18. The method of claim 14, wherein forming a solar cell includes forming a solar cell over about all of the back side of the bulk silicon.
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19. The method of claim 14, wherein forming a metal via in the bulk silicon comprises:
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milling the bulk silicon and forming a hole;
forming an insulative layer on the inside surface of the hole; and
forming a metal via in the insulated hole.
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Specification