Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane
First Claim
1. An atomic layer deposition method of forming a solid thin film layer containing silicon comprising the steps of:
- a) placing a substrate into a chamber;
b) injecting a first reactant containing Si and an aminosilane into the chamber;
c) chemisorbing a first portion of the first reactant onto the substrate and physisorbing a second portion of the first reactant onto the substrate;
d) removing the physisorbed second portion of the first reactant from the substrate;
e) injecting a second reactant into the chamber;
f) chemically reacting a first portion of the second reactant with the chemisorbed first portion of the first reactant to form a silicon-containing solid on the substrate; and
, g) removing the non-chemically reacted portion of the second reactant from the chamber.
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Abstract
An atomic layer deposition method of forming a solid thin film layer containing silicon. A substrate is loaded into a chamber. A first portion of a first reactant is chemisorbed onto the substrate, and a second portion of the first reactant is physisorbed onto the substrate. The physisorbed portion is purged from the substrate and the chamber. A second reactant is injected into the chamber. A first portion is chemically reacted with the chemisorbed first reactant to form a silicon-containing solid on the substrate. The first reactant is preferably Si[N(CH3)2]4, SiH[N(CH3)2]3, SiH2[N(CH3)2]2 or SiH3[N(CH3)2]. The second reactant is preferably activated NH3.
784 Citations
28 Claims
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1. An atomic layer deposition method of forming a solid thin film layer containing silicon comprising the steps of:
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a) placing a substrate into a chamber;
b) injecting a first reactant containing Si and an aminosilane into the chamber;
c) chemisorbing a first portion of the first reactant onto the substrate and physisorbing a second portion of the first reactant onto the substrate;
d) removing the physisorbed second portion of the first reactant from the substrate;
e) injecting a second reactant into the chamber;
f) chemically reacting a first portion of the second reactant with the chemisorbed first portion of the first reactant to form a silicon-containing solid on the substrate; and
,g) removing the non-chemically reacted portion of the second reactant from the chamber. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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25. A method of manufacturing a solid thin film containing silicon comprising the steps of:
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a) placing a substrate into a chamber;
b) injecting a first gaseous reactant containing Si and H(CH3)2 into the chamber;
c) reacting a first portion of the first reactant to form a first silicon-containing solid on the substrate and physisorbing a second portion of the first reactant onto the substrate;
d) removing the physisorbed second portion of the first reactant from the substrate;
e) injecting a second reactant into the chamber;
f) chemically reacting a first portion of the second reactant to form a second silicon-containing solid on the substrate and physisorbing a second portion of the second reactant onto the substrate; and
,g) removing the physisorbed second portion of the second reactant from the chamber. - View Dependent Claims (26, 27)
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28. An atomic layer deposition method of forming a solid thin film layer containing silicon comprising the steps of:
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a) placing a substrate into a chamber;
b) injecting a first reactant containing Si and an aminosilane into the chamber;
c) chemisorbing a first portion of the first reactant onto the substrate and physisorbing a second portion of the first reactant onto the substrate;
d) removing the physisorbed second portion of the first reactant from the substrate;
e) injecting a second reactant into the chamber;
f) chemically reacting a first portion of the second reactant with the chemisorbed first portion of the first reactant to form a silicon-containing solid on the substrate;
g) removing the unreacted portion of the second reactant from the chamber; and
,h) repeating one or more of steps b)-g).
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Specification