Method of controlling and improving SOG etchback etcher

  • US 6,394,104 B1
  • Filed: 08/28/1998
  • Issued: 05/28/2002
  • Est. Priority Date: 08/28/1998
  • Status: Expired due to Term
First Claim
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1. A method of removing polymer buildup from the surfaces of an etching chamber comprising:

  • providing said etching chamber in which spin-on-glass etchback is performed whereby said polymer buildup is formed on said surfaces of said chamber including an upper electrode in said chamber;

    placing a dummy wafer into said etching chamber; and

    removing said polymer buildup from said surfaces of said chamber including said upper electrode using a dry plasma cleaning process comprising flowing Ar at 300 to 500 sccm, flowing O2 at 15 to 100 sccm, and flowing CF4 at 40 to 100 sccm under a pressure of 200 to 600 mTorr and power of 500 to 1000 watts for a duration of 20 to 50 minutes.

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