PE-silane oxide particle performance improvement

  • US 6,399,522 B1
  • Filed: 05/11/1998
  • Issued: 06/04/2002
  • Est. Priority Date: 05/11/1998
  • Status: Expired due to Term
First Claim
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1. A method of forming a silicon oxide film using plasma-enhanced chemical vapor deposition in the fabrication of an integrated circuit comprising:

  • providing a semiconductor substrate over which said silicon oxide film is to be formed; and

    forming said silicon oxide film by the steps of;

    1) pre-flowing a non-silane gas into a deposition chamber for at least two seconds;

    wherein a silane gas is not present; and

    2) thereafter depositing said silicon oxide film by chemical vapor deposition by flowing a silane gas into said deposition chamber to complete said formation of said silicon oxide film using plasma-enhanced chemical vapor deposition in the fabrication of said integrated circuit.

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