Semiconductor components, in particular photodetectors, light emitting diodes, optical modulators and waveguides with multilayer structures grown on silicon substrates
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Abstract
A semiconductor component, selected from the group comprising a photodetector, a light emitting diode, an optical modulator and a waveguide. The semiconductor component comprises an Si substrate, an active region formed on said substrate, and an Si capping layer on said active region. In one embodiment the active region is a superlattice comprising alternating layers of Si1-yCy and Si1-x-yGexCy, with the atomic fraction y of the Si1-x-yGexCy layers being equal to or different from the atomic fraction y of the Si1-yCy layers. In another embodiment it is a superlattice comprising a plurality of periods of a three-layer structure comprising Si, Si1-yCy and Si1-xGex layers. In a third embodiment it is a superlattice comprising a plurality of periods of a three-layer structure comprising Si, Si1-yCy and Si1-x-yGexCy layers, with the atomic fraction y of the Si1-x-yGexCy layers being equal to or different from the atomic fraction y of the Si1-yCy layers. The components have faborable optical and electrical properties and are suitable for integration on a Si substrate.
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