SOI wafer device and a method of fabricating the same
First Claim
1. A SOI device comprising:
- a base substrate;
a buried oxide layer formed to expose a predetermined region of the base substrate on the base substrate;
a body contact layer formed to the same thickness as the buried oxide layer on the exposed base substrate region;
a body layer of a transistor formed on the buried oxide layer and the body contact layer;
a gate having a gate oxide layer formed on the body layer; and
a drain region and a source region respectively formed in a depth contacting with the buried oxide in the body layer region at both sides of the gate, the source being in contact with the body contact layer.
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Abstract
The present invention discloses a SOI device capable of removing a floating body effect and improving a static electricity emission characteristic and a method of fabricating the same. The SOI device according to the present invention, comprising: a base substrate; a buried oxide layer formed to expose a predetermined region of the base substrate on the base substrate; a body contact layer formed to the same thickness as the buried oxide layer on the exposed base substrate region; a body layer of a transistor formed on the buried oxide layer and the body contact layer; a gate having a gate oxide layer formed on the body layer; and a drain region and a source region formed in a depth contacting with the buried oxide in the body layer region at both sides of the gate, the source being in contact with the body contact layer.
111 Citations
7 Claims
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1. A SOI device comprising:
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a base substrate;
a buried oxide layer formed to expose a predetermined region of the base substrate on the base substrate;
a body contact layer formed to the same thickness as the buried oxide layer on the exposed base substrate region;
a body layer of a transistor formed on the buried oxide layer and the body contact layer;
a gate having a gate oxide layer formed on the body layer; and
a drain region and a source region respectively formed in a depth contacting with the buried oxide in the body layer region at both sides of the gate, the source being in contact with the body contact layer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification