Method for producing insulator film

• US 6,419,985 B1
• Filed: 05/26/2000
• Issued: 07/16/2002
• Est. Priority Date: 11/27/1997
• Status: Expired due to Fees

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Ishizuka, Shuichi
• Primary Examiner(s): CHEN, BRET P
• Application Number:
  US09/578,719
• Time in Patent Office: 781 Days
• Field of Search: 427/577, 427/249.1, 427/249.6, 427/96, 427/99, 427/376.1
• US Class Current: 427/249.1
• CPC Class Codes: B05D 1/62 Plasma-deposition of organic layers plasma deposition in general C23C14/00, C23C16/00
• CPC Class Codes: B05D 3/0254 After-treatment
• CPC Class Codes: H01L 21/0212 the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/02337 treatment by exposure to a gas or vapour
• CPC Class Codes: H01L 21/31058 of organic layers
• CPC Class Codes: H01L 21/312 Organic layers, e.g. photoresist H01L21/3105, H01L21/32 take precedence; photoresists per se G03C
• CPC Class Codes: H01L 21/3127 Layers comprising fluoro (hydro)carbon compounds, e.g. polytetrafluoroethylene

Abstract

A method for producing an insulator film for use as an interlayer dielectric film in a semiconductor device having a multi-level interconnection structure is disclosed. An inert plasma producing gas, such as argon, is introduced into a vacuum vessel along with a thin film deposition gas, such as a compound gas containing fluorine and carbon. Activation of the plasma producing gas activates the thin film producing gas, resulting in a thin fluorine containing carbon insulator film on the semiconductor device. In order to thermally stabilize the insulator layer, the semiconductor device is annealed.

Claims

1. A method for producing an insulator film for use as an interlayer dielectric film in a semiconductor device having a multi-level interconnection structure, said method comprising:

decomposing a thin-film deposition gas containing a compound gas of carbon and fluorine to deposit an insulator film of a fluorine containing carbon film on a substrate; and

heat treating said fluorine containing carbon film to desorb a part of components of said fluorine containing carbon film,

wherein the heat treating comprises annealing said fluorine containing carbon film in an atmosphere of hydrogen gas.

3. The method of claim 1 or 2, wherein the decomposing comprises activating said thin-film deposition gas in order to deposit said insulator film of said fluorine containing carbon film on said substrate.

2. A method for producing an insulator film for use as an interlayer dielectric film in a semiconductor device having a multi-level interconnection structure, said method comprising:

decomposing a thin-film deposition gas containing a compound gas of carbon and fluorine to deposit an insulator film of a fluorine containing carbon film on a substrate; and

heat treating said fluorine containing carbon film to desorb a part of components of said fluorine containing carbon film,

wherein the heat treating comprises annealing said fluorine containing carbon film in an atmosphere of fluorine gas.

4. A method for producing an insulator film for use as an interlayer dielectric film in a semiconductor device having a multi-level interconnection structure, the method comprising:

introducing a plasma producing inert gas into a vacuum vessel;

introducing a thin-film deposition gas including a compound gas of carbon and fluorine into the vacuum vessel;

activating the plasma producing inert gas, wherein activating the plasma producing inert gas activates the thin-film deposition gas resulting in a thin fluorine containing carbon insulator film being deposited on a surface of a substrate; and

heating the substrate in an atmosphere of one of hydrogen gas and fluorine gas in order to thermally stabilize the thin fluorine containing carbon insulator film.

5. The method of claim 4, wherein the inert gas is argon gas.