Solid-state image-sensing device and method for producing the same

• US 6,423,993 B1
• Filed: 02/07/2000
• Issued: 07/23/2002
• Est. Priority Date: 02/09/1999
• Status: Expired due to Term

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Suzuki, Ryoji, Mabuchi, Keiji, Sumi, Hirofumi, Ueno, Takahisa
• Primary Examiner(s): Ngô , Ngân V.
• Application Number:
  US09/499,449
• Time in Patent Office: 897 Days
• Field of Search: 257/222, 257/223, 257/229, 257/291, 257/292, 257/443, 257/446, 257/461
• US Class Current: 257/292
• CPC Class Codes: H01L 27/14603 Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 27/1463 Pixel isolation structures
• CPC Class Codes: H01L 27/14643 Photodiode arrays; MOS imagers
• CPC Class Codes: H01L 27/14689 MOS based technologies

Abstract

A solid-state image-sensing device has pn-junction sensor parts isolated corresponding to pixels by a device isolation layer. The solid-state image-sensing device includes a first-conductivity-type second semiconductor well region formed between a first-conductivity-type first semiconductor well region and the device isolation layer. When the device is operating, a depletion layer of each sensor part spreads to the first semiconductor well region, which is beneath each of the sensor parts.

Claims

1. A solid-state image-sensing device having pn-junction sensor parts isolated corresponding to pixels by a device isolation layer, said solid-state image-sensing device comprising

a first-conductivity-type second semiconductor well region formed between a first-conductivity-type first semiconductor well region and said device isolation layer,

wherein, when the device is operating, a depletion layer of each sensor part spreads to the first semiconductor well region, which is beneath each of said sensor parts.

2. A solid-state image-sensing device according to claim 1, wherein the second semiconductor well region is simultaneously formed with the semiconductor well regions formed after the formation of said device isolation layer in a complementary-metal-oxide-semiconductor transistor.

3. A solid-state image-sensing device having pn-junction sensor parts isolated corresponding to pixels by a device isolation layer resulting from local oxidation, said solid-state image-sensing device comprising a semiconductor region of a conductivity type opposite to the conductivity type of a charge accumulating region of each of the sensor parts, the semiconductor region formed between the charge accumulating region of each sensor part and said device isolation layer.

4. A solid-state image-sensing device according to claim 3, further comprising

a second semiconductor well region formed between said device isolation layer and a first semiconductor well region beneath said device isolation layer,

wherein, when the device is operating, the depletion layer of each of said sensor parts spreads to said first semiconductor well region, which is beneath each of said sensor parts.

5. A solid-state image-sensing device according to claim 3, wherein the semiconductor region is formed by extending a portion of a second semiconductor well region formed between said device isolation layer and a first semiconductor well region beneath said device isolation layer.

6. A solid-state image-sensing device including pn-junction sensor parts isolated corresponding to pixels by a device isolation layer resulting from trench isolation, said solid-state image-sensing device comprising

a semiconductor region of a conductivity type opposite to the conductivity type of the charge accumulating region of each of said sensor parts, said semiconductor region formed to extend from said device isolation layer to a pixel region.

7. A solid-state image-sensing device according to claim 6, wherein the opposite-conductivity-type semiconductor region is formed by extending a portion of a semiconductor well region.