Solid-state image-sensing device and method for producing the same

  • US 6,423,993 B1
  • Filed: 02/07/2000
  • Issued: 07/23/2002
  • Est. Priority Date: 02/09/1999
  • Status: Expired due to Term
First Claim
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1. A solid-state image-sensing device having pn-junction sensor parts isolated corresponding to pixels by a device isolation layer, said solid-state image-sensing device comprisinga first-conductivity-type second semiconductor well region formed between a first-conductivity-type first semiconductor well region and said device isolation layer, wherein, when the device is operating, a depletion layer of each sensor part spreads to the first semiconductor well region, which is beneath each of said sensor parts.

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