Current-controlled CMOS logic family

• US 6,424,194 B1
• Filed: 01/18/2000
• Issued: 07/23/2002
• Est. Priority Date: 06/28/1999
• Status: Expired due to Term

• Current Assignee: Avago Technologies International Sales Pte Limited (Broadcom, Inc.)
• Original Assignee: Broadcom Corporation (Broadcom, Inc.)
• Inventors: Hairapetian, Armond
• Primary Examiner(s): Tran, Toan
• Assistant Examiner(s): Nguyen, Hai L.
• Application Number:
  US09/484,856
• Time in Patent Office: 917 Days
• Field of Search: 327/199, 327/201, 327/202, 327/203, 327/207, 327/208, 327/210, 327/211, 327/212, 327/214, 327/215, 327/219, 327/223, 327/115-120, 377/47, 377/48, 326/95-98, 326/108-110, 326/121, 326/122
• US Class Current: 327/210
• CPC Class Codes: H03K 17/04 Modifications for accelerating switching
• CPC Class Codes: H03K 17/04106 in field-effect transistor switches H03K17/0412, H03K17/0416 take precedence
• CPC Class Codes: H03K 17/04163 in field-effect transistor switches
• CPC Class Codes: H03K 17/693 Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors logic circuits H03K19/00; code converters H03M5/00, H03M7/00
• CPC Class Codes: H03K 19/09432 with coupled sources or source coupled logic H03K19/096 takes precedence
• CPC Class Codes: H03K 19/215 using field-effect transistors
• CPC Class Codes: H03K 2217/0036 Means reducing energy consumption
• CPC Class Codes: H03K 3/356043 with synchronous operation
• CPC Class Codes: H03K 3/356139 with synchronous operation
• CPC Class Codes: H03K 3/3562 of the master-slave type

Abstract

Various circuit techniques for implementing ultra high speed circuits use current-controlled CMOS (C³MOS) logic fabricated in conventional CMOS process technology. An entire family of logic elements including inverter/buffers, level shifters, NAND, NOR, XOR gates, latches, flip-flops and the like are implemented using C³MOS techniques. Optimum balance between power consumption and speed for each circuit application is achieve by combining high speed C³MOS logic with low power conventional CMOS logic. The combined C³MOS/CMOS logic allows greater integration of circuits such as high speed transceivers used in fiber optic communication systems.

Claims

1. A metal-oxide-semiconductor field-effect transistor (MOSFET) circuit fabricated on a silicon substrate, comprising:

first circuitry implemented using current-controlled complementary metal-oxide semiconductor C³MOS logic wherein logic levels are signaled by current steering in one of two or more branches in response to differential input signals, the first circuitry being configured to process a first signal having a first frequency; and

second circuitry implemented using conventional complementary metal-oxide-semiconductor (CMOS) logic wherein substantially zero static current is dissipated, the second circuitry being coupled to the first circuitry and configured to process a second signal having a second frequency that is different than the first frequency,

wherein the first circuitry comprises an input circuit that is implemented using the C³MOS logic, and is configured to deserialize the first signal into a plurality of lower frequency signals.

2. The MOSFET circuit of claim 1 wherein the second circuitry comprises conventional CMOS logic that is configured to process the plurality of lower frequency signals to generate a plurality of lower frequency processed signals.

3. The MOSFET circuit of claim 2 wherein the first circuitry further comprises an output circuit that is implemented using the C³MOS logic, and is configured to serialize the plurality of processed signals into one output signal.

4. The MOSFET circuit of claim 1 wherein the input circuit comprises:

a frequency divider coupled to receive an input clock signal CLK having a first frequency, and to generate an output clock signal having a second frequency that is lower than the first frequency; and

a sampling circuit coupled to receive the output clock signal and to sample the input signal in response to the output clock signal,

the sampling circuit being configured to generate the plurality of lower frequency signals.

5. The MOSFET circuit of claim 4 wherein the frequency divider comprises a C³MOS flip-flop having an output coupled to its input to form a divide-by-2 circuit, the flip-flop generating CLK/2 at its output.

6. The MOSFET circuit of claim 5 wherein the sampling circuit comprises a first C³MOS latch configured to sample rising edge of the input signal and a second C³MOS latch configured to sample falling edge of the input signal.

7. The MOSFET circuit of claim 6 wherein the first or second C³MOS latch comprises:

first and second n-channel MOSFETs having their source terminals coupled together, their gate terminals coupled to receive a pair of differential logic signals, respectively, and their drain terminals coupled to a true output and a complementary output, respectively;

a first clocked n-channel MOSFET having a drain terminal coupled to the source terminals of the first and second n-channel MOSFETs, a gate terminal coupled to receive a first clock signal CK, and a source terminal;

third and fourth n-channel MOSFETs having their source terminals coupled together, their gate terminals and drain terminals respectively cross-coupled to the true output and the complementary output;

a second clocked n-channel MOSFET having a drain terminal coupled to the source terminals of the third and fourth n-channel MOSFETs, a gate terminal coupled to receive a second clock signal CKB, and a source terminal;

first and second resistive elements respectively coupling the true output and the complementary output to a logic high level; and

a current-source n-channel MOSFET coupled between the source terminals of the first and second clocked n-channel MOSFETs and a logic low level.

8. A metal-oxide-semiconductor field-effect transistor (MOSFET) circuit comprising:

a first circuit implemented using current-controlled complementary metal-oxide semiconductor (C³MOS) logic wherein logic levels are signaled by current steering in one of two or more branches in response to differential input signals, the first circuit being configured to receive an input signal having a first frequency and to generate a first output signal having a second frequency lower than the first frequency;

a second circuit coupled to the first circuit and implemented using conventional complementary metal-oxide-semiconductor (CMOS) logic wherein substantially zero static current is dissipated, the second circuit being configured to receive and process the first output signal and to generate a second output signal; and

a third circuit coupled to the second circuit and implemented using C³MOS logic, the third circuit being configured to receive and process the second output signal and to generate a third output signal.

9. The MOSFET circuit of claim 8 wherein the third output signal has a frequency that is higher than the second frequency.

10. The MOSFET circuit of claim 9 wherein the third output signal has a frequency that is substantially equal to the first frequency.

11. The MOSFET circuit of claim 10 wherein the first circuit comprises a deserializer that receives the input signal and using a clock signal generates the first output signal, the first output signal comprising N signals having the second frequency, where N is an integer greater than one.

12. The MOSFET circuit of claim 11 wherein the second circuit comprises N substantially identical CMOS circuits that respectively process the N signals and generate the second output signal, the second output signal comprising N processed signals.

13. The MOSFET circuit of claim 12 wherein the third circuit comprises a serializer that receives the N processed signals and generates the third output signal.

14. The MOSFET circuit of claim 13 wherein the second circuit comprises core transceiver circuitry.

15. A method for processing high speed signals using silicon complementary metal-oxide-semiconductor (CMOS) technology, the method comprising:

receiving the high speed signal at a first circuit that uses current-controlled complementary metal-oxide semiconductor (C³MOS) logic wherein logic levels are signaled by current steering in one of two or more branches in response to differential input signals;

deserializing the high speed signal into a plurality of lower frequency signals;

processing the plurality of lower frequency signals by a second circuit that uses standard CMOS logic wherein substantially zero static current is dissipated; and

serializing output signals of the second circuit by a third circuit that uses C³MOS logic.

16. The method of claim 15 wherein the deserializing comprises:

dividing an input clock signal having a first frequency to generate a lower frequency clock signal; and

sampling the high speed signal using the lower frequency clock signal.

17. A metal-oxide-semiconductor field-effect transistor (MOSFET) circuit fabricated on a silicon substrate, comprising:

first circuitry implemented using current-controlled complementary metal-oxide semiconductor C³MOS logic wherein logic levels are signaled by current steering in one of two or more branches in response to differential input signals, the first circuitry being configured to process a first signal having a first frequency; and

second circuitry implemented using conventional complementary metal-oxide-semiconductor (CMOS) logic wherein substantially zero static current is dissipated, the second circuitry being coupled to the first circuitry and configured to process a plurality of second signals having a second frequency that is lower than the first frequency,

wherein the first circuitry comprises an output circuit that is implemented using the C³MOS logic, and is configured to serialize the second plurality of signals into a single output signal.