Code addressable memory cell in flash memory device

• US 6,424,568 B2
• Filed: 12/27/2000
• Issued: 07/23/2002
• Est. Priority Date: 12/28/1999
• Status: Expired due to Term

• Current Assignee: Hyundai Electronics Industries Co. Ltd. (SK Hynix Inc.)
• Original Assignee: Hyundai Electronics Industries Co. Ltd. (SK Hynix Inc.)
• Inventors: Ahn, Byung-Jin
• Primary Examiner(s): Nguyen, Viet Q.
• Application Number:
  US09/748,266
• Publication Number:
  US 20010024385A1
• Time in Patent Office: 573 Days
• Field of Search: 365/185.01, 365/185.05, 365/185.08, 365/149, 365/185.26
• US Class Current: 365/185.08
• CPC Class Codes: G11C 15/046 using non-volatile storage elements
• CPC Class Codes: G11C 16/0416 comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM

Abstract

A code addressable memory (CAM) included in a flash memory device comprises a unit cell including a floating gate and a control gate; and a gate coupling unit coupled to the unit cell or further comprises a switching circuit for connecting and disconnecting the unit cell with the gate coupling unit respectively at a read operation of the CAM and a programming or an erasing operation of the CAM.

Claims

1. A code addressable memory for use in a flash memory device, the code addressable memory comprising:

a unit cell having a floating gate and a control gate; and

a capacitor including an upper electrode and a lower electrode, wherein the upper electrode is coupled to the control gate and the lower electrode is coupled to the floating gate.

2. The code addressable memory as recited in claim 1, further comprising a switching circuit for electrically coupling and decoupling the unit cell and the capacitor.

3. The code addressable memory as recited in claim 2, wherein the switching circuit comprises circuitry for electrically coupling between the unit cell and the capacitor during a read operation of the code addressable memory and decoupling the unit cell and the capacitor during a programming or an erasing operation of the code addressable memory.