Methods and arrangements for forming a single interpoly dielectric layer in a semiconductor device

  • US 6,433,383 B1
  • Filed: 07/20/1999
  • Issued: 08/13/2002
  • Est. Priority Date: 07/20/1999
  • Status: Expired due to Term
First Claim
Patent Images

1. A semiconductor device comprising:

  • a floating gate structure;

    a control gate structure; and

    a single continuous non-laminated dielectric layer located between the floating gate structure and the control gate structure, the single continuous non-laminated dielectric layer being between about 40 Angstroms to about 300 Angstroms thick and including silicon having a first oxygen-rich region, a nitrogen-rich region, and a second oxygen-rich region, wherein the first oxygen-rich region is between about 1 Angstrom to about 200 Angstroms thick and is in direct physical contact with at least a portion of the floating gate structure, the nitrogen-rich region the nitrogen-rich region is between about 10 Angstroms and about 300 Angstroms thick, has a concentration of nitrogen that is substantially constant throughout the entire thickness of the nitrogen-rich region and is located between the first and second oxygen-rich regions, and the second oxygen-rich region is between about 1 Angstrom to about 100 Angstroms thick and is in direct physical contact with at least a portion of the control gate structure.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×