Electrostatic discharge protection for sensors

• US 6,440,814 B1
• Filed: 12/30/1998
• Issued: 08/27/2002
• Est. Priority Date: 12/30/1998
• Status: Expired due to Term

• Current Assignee: Apple Inc.
• Original Assignee: STMicroelectronics Incorporated (STMicroelectronics NV)
• Inventors: Thomas, Danielle A., Lepert, Arnaud Yves
• Primary Examiner(s): Chaudhuri, Olik
• Assistant Examiner(s): Peralta, Ginette
• Application Number:
  US09/223,629
• Time in Patent Office: 1,336 Days
• Field of Search: 438/396, 438/393-397, 438/238, 369/72, 369/126, 361/271
• US Class Current: 438/393
• CPC Class Codes: G06V 40/1329 Protecting the fingerprint sensor against damage caused by the finger

Abstract

A structure and method is disclosed for dissipating electrostatic charges comprising an underlying dielectric layer disposed over capacitor plates of sensor circuitry, and a conductive layer and passivation layers disposed over the underlying dielectric layer wherein the conductive layer diffuses electrostatic charges at the surface of the integrated circuit.

Claims

1. A method of forming an electrostatic discharge device, comprising:

forming a composite protection layer between and over a plurality of conductive plates which form capacitors with an object when the object is placed on a sensing surface proximate to the conductive plates for capacitive sensing of features of the object,

wherein the protection layer isolates the conductive plates and protects the conductive plates from damage, and

wherein the protection layer comprises a dielectric region between and over the plurality of conductive plates and an electrostatic discharge region overlying at least part of the dielectric region, at least a portion of the protection layer having an opening therethrough over at least one of the conductive plates.

2. The method of claim 1, wherein the step of forming a composite protection layer between and over a plurality of conductive plates further comprises:

forming a passivation layer over the dielectric region and the electrostatic discharge region, wherein the passivation layer further protects the conductive plates from damage.

3. The method of claim 2, wherein the step of forming a passivation layer over the dielectric region and the electrostatic discharge region further comprises:

forming the passivation layer with an opening therethrough over the conductive plates.

4. The method of claim 1, wherein the step of forming a composite protection layer between and over a plurality of conductive plates further comprises:

forming the dielectric region and the electrostatic discharge region over the conductive plates.

5. The method of claim 4, further comprising:

forming a passivation layer over the dielectric region and the electrostatic discharge region, the passivation layer having an opening therethrough over the conductive plates.

6. The method of claim 1, wherein the step of forming a composite protection layer between and over a plurality of conductive plates further comprises:

forming the dielectric region over the conductive plates; and

forming the electrostatic discharge region over the dielectric region, the electrostatic discharge region having an opening therethrough over the conductive plates.

7. The method of claim 6, further comprising:

forming a passivation layer over the dielectric region and the electrostatic discharge region, the passivation layer having an opening therethrough coinciding with the opening through the electrostatic discharge region.

8. The method of claim 1, wherein the step of forming a composite protection layer between and over a plurality of conductive plates further comprises:

forming the dielectric region over the conductive plates; and

forming the electrostatic discharge region over the dielectric region, the electrostatic discharge region having an opening therethrough over at least some of the conductive plates.

9. The method of claim 6, further comprising:

forming a passivation layer over the dielectric region and the electrostatic discharge region and within the opening through the electrostatic discharge region.

11. The method of claim 3, wherein the dielectric layer comprises a first dielectric layer of oxide or doped glass disposed under a second dielectric layer of nitride.

12. The method of claim 3, further comprising the step of:

forming a passivation layer of silicon carbide or silicon nitride disposed over at least a portion of the dielectric layer.

10. A method of forming an electrostatic discharge device, comprising:

forming a dielectric layer over a plurality of conductive plates which form capacitors with an object when the object is placed on a sensing surface proximate to the conductive plates for capacitive sensing of features of the object, the dielectric layer isolating the conductive plates; and

forming a conductive layer disposed over at least a portion of the dielectric layer adjacent to one or more conductive plates, the conductive layer having an opening therethrough over at least one of the conductive plates,

wherein the conductive layer dissipates an electrostatic charge in a manner which prevents the electrostatic charge from reaching the plurality of conductive plates.

13. The method of claim 10, further comprising:

forming the conductive plates in pairs.

14. The method of claim 13, wherein the step of forming a conductive layer disposed over at least a portion of the dielectric layer adjacent to one or more conductive plates further comprises:

forming the conductive layer with an opening therethrough over both conductive plates within each pair of conductive plates.

15. The method of claim 14, further comprising:

forming a passivation layer over the conductive layer with an opening therethrough coinciding with the opening through the conductive layer.

16. The method of claim 13, wherein the step of forming a conductive layer disposed over at least a portion of the dielectric layer adjacent to one or more conductive plates further comprises:

forming the conductive layer extending over one conductive plate within each pair of conductive plates and having an opening therethrough over the other conductive plate within each pair of conductive plates.

17. The method of claim 16, further comprising:

forming a passivation layer over the conductive layer and within the opening through the conductive layer.

18. A method of forming a device, comprising:

forming a dielectric layer over a plurality of conductive plates which form capacitors with an object when the object is placed on a sensing surface proximate to the conductive plates for capacitive sensing of features of the object, the dielectric layer isolating the conductive plates;

forming a passivation layer over the dielectric layer, the passivation layer having openings therethrough over the conductive plates; and

forming electrostatic discharge regions over the conductive plates within the openings through the passivation layer.

19. The method of claim 18, comprising:

forming the passivation layer over the dielectric layer;

forming openings through the passivation layer over the conductive plates; and

forming the electrostatic discharge regions within the openings through the passivation layer.

20. The method of claim 18, comprising:

forming a conductive layer over the dielectric layer;

patterning the conductive layer to form the electrostatic discharge regions over the conductive plates;

forming the passivation layer over the dielectric layer and the electrostatic discharge layer; and

etching back the passivation layer over the electrostatic discharge regions.