Semiconductor device and method for fabricating the same

CAFC
  • US 6,445,047 B1
  • Filed: 10/25/2000
  • Issued: 09/03/2002
  • Est. Priority Date: 10/26/1999
  • Status: Expired due to Term
First Claim
Patent Images

1. A semiconductor device comprising:

  • a first-surface-channel-type MOSFET with a first threshold voltage; and

    a second-surface-channel-type MOSFET with a second threshold voltage having an absolute value greater than an absolute value of said first threshold voltage, wherein the first-surface-channel-type MOSFET includes;

    a first gate insulating film formed on a semiconductor substrate; and

    a first gate electrode, which has been formed out of a poly-silicon film formed directly on the first gate insulating film, and wherein the second-surface-channel-type MOSFET includes;

    a second gate insulating film formed on the semiconductor substrate; and

    a second gate electrode, which has been formed out of a refractory metal film formed directly on the second gate insulating film, the refractory metal film being made of a refractory metal or a compound thereof.

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