Method for nitride based laser diode with growth substrate removed

  • US 6,448,102 B1
  • Filed: 03/26/1999
  • Issued: 09/10/2002
  • Est. Priority Date: 12/30/1998
  • Status: Expired due to Term
First Claim
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1. A method for making a nitride laser diode array structure comprising the operations of:

  • providing a semiconductor membrane having an insulating substrate attached on a first side of said semiconductor membrane;

    attaching a metallic interlayer to a second side of said semiconductor membrane;

    attaching a thermally conducting substrate to said metallic interlayer;

    removing said insulating substrate from said first side of said semiconductor membrane by exposing said insulating substrate to laser light; and

    placing a metal layer on said first side of said semiconductor membrane.

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