Magnetically enhanced plasma etch process using a heavy fluorocarbon etching gas

  • US 6,451,703 B1
  • Filed: 03/10/2000
  • Issued: 09/17/2002
  • Est. Priority Date: 03/10/2000
  • Status: Expired due to Fees
First Claim
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1. A method for etching an oxide layer with increased selectivity to photoresist, comprising the steps of:

  • providing a magnetically enhanced plasma etch reactor chamber having a pedestal electrode supporting a substrate having said oxide layer to be etched;

    flowing into said chamber an etching gas mixture comprising (a) hexafluorobutadiene, (b) oxygen, and (c) a chemically inactive carrier gas selected from the group consisting of argon and xenon and containing essentially no carbon monoxide;

    applying a magnetic field substantially parallel to said pedestal electrode; and

    applying RF electrical power to said pedestal electrode to provide the only significant power to excite said etching gas mixture into a plasma to thereby etch a hole into said oxide layer defined by a patterned photomask comprising photoresist overlying said oxide layer with an etching selectivity to a facet of said photoresist of at least 5;

    1.

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