Increased damping of magnetization in magnetic materials
First Claim
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1. A magnetic device comprising:
- a) at least one electrode; and
b) a free magnetic region comprising an alloy of at least one of Ni—
Fe, Co—
Fe, or Ni—
Co, and at least one transition metal selected from the group consisting of 4d transition metals and 5d transition metals, wherein said at least one transition metal is present in an atomic concentration of about 4% to about 15% of said alloy.
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Abstract
In order to dampen magnetization changes in magnetic devices, such as tunnel junctions (MTJ) used in high speed Magnetic Random Access Memory (MRAM), a transition metal selected from the 4d transition metals and 5d transition metals is alloyed into the magnetic layer to be dampened. In a preferred form, a magnetic permalloy layer is alloyed with osmium (Os) in an atomic concentration of between 4% and 15% of the alloy.
32 Citations
14 Claims
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1. A magnetic device comprising:
-
a) at least one electrode; and
b) a free magnetic region comprising an alloy of at least one of Ni—
Fe, Co—
Fe, or Ni—
Co, and at least one transition metal selected from the group consisting of 4d transition metals and 5d transition metals, wherein said at least one transition metal is present in an atomic concentration of about 4% to about 15% of said alloy.- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification